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  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

FRA1002G Datasheet

(FRA1001G - FRA1007G) 10 Amps / Glass Passivated Fast Recovery Rectifiers

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FRA1002G pdf
FRA1001G THRU FRA1007G
Features
10 AMPS. Glass Passivated Fast Recovery Rectifiers
Voltage Range
50 to 1000 Volts
Current
10 Amperes
TO-220A
Low forward voltage drop
High current capability
High reliability
High surge current capability
Mechanical Data
Cases: ITO-220AC molded plastic
Epoxy: UL 94V-0 rate flame retardant
Terminals: Leads solderable per
MIL-STD-202, Method 208 guaranteed
Polarity: As marked
High temperature soldering guaranteed:
260/10 seconds .16”,(4.06mm) from
case.
Mounting position: Any
.113(2.87)
.103(2.62)
.412(10.5)
MAX
DIA
.154(3.91)
.148(3.74)
.27(6.86)
.23(5.84)
.594(15.1)
.587(14.9)
.185(4.70)
.175(4.44)
.055(1.40)
.045(1.14)
.16(4.06)
.14(3.56)
PIN1
2
.037(0.94)
.027(0.68)
.56(14.22)
.53(13.46)
.11(2.79)
.10(2.54)
.205(5.20)
.195(4.95)
.025(0.64)
.014(0.35)
PIN 1
PIN 2
CASE
Case Positive
Weight: 2.24 grams
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol FRA FRA FRA FRA FRA FRA FRA Units
1001G 1002G 1003G 1004G 1005G 1006G 1007G
Maximum Recurrent Peak Reverse Voltage
VRRM 50 100 200 400 600 800 1000 V
Maximum RMS Voltage
VRMS 35 70 140 280 420 560 700 V
Maximum DC Blocking Voltage
VDC 50 100 200 400 600 800 1000 V
Maximum Average Forward Rectified Current
@TC = 100
I(AV)
10
A
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC
method )
IFSM
150
A
Maximum Instantaneous Forward Voltage @ 10A
Maximum DC Reverse Current @ TC=25
at Rated DC Blocking Voltage @ TC=125
VF
IR
1.3 V
5.0 uA
100 uA
Maximum Reverse Recovery Time ( Note 2 )
Typical Junction Capacitance ( Note 1 ) TJ=25
Typical Thermal Resistance (Note 3)
Operating and Storage Temperature Range
Trr
Cj
RθJC
TJ ,TSTG
150 250
100
3.0
-65 to +150
500 nS
pF
/W
Notes: 1. Measured at 1 MHz and Applied Reverse Voltage of 4..0 Volts D.C.
2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
3. Thermal Resistance from Junction to Case, Mount on Heatsink size 2" x 3" x 0.25" Al-Plate
- 402 -


  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

FRA1002G Datasheet

(FRA1001G - FRA1007G) 10 Amps / Glass Passivated Fast Recovery Rectifiers

No Preview Available !

FRA1002G pdf
RATINGS AND CHARACTERISTIC CURVES (FRA1001G THRU FRA1007G)
FIG.1- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50W
NONINDUCTIVE
10W
NONINDUCTIVE
(+)
50Vdc
(approx)
(-)
DUT
1W
NON
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
(-)
PULSE
GENERATOR
(NOTE 2)
(+)
+0.5A
0
-0.25A
trr
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
FIG.2- MAXIMUM FORWARD CURRENT DERATING
CURVE
10
8
6
4
2
0
0 50 100
CASE TEMPERATURE. (oC)
FIG.3- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
150
125
100
75
TC=1250C
8.3ms Single Half Sine Wave
JEDEC Method
150
50
25
-1.0A
1cm
SET TIME BASE FOR
5/ 10ns/ cm
FIG.5- TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
400
200
100
40
20
Tj=25oC
Pulse Width=300 s
1% Duty Cycle
10
4
2
1
0.4
0.2
0.1.6
.8 1.0 1.2 1.4 1.6 1.8 2.0
INSTANTANEOUS FORWARD VOLTAGE. (V)
FIG.6- TYPICAL REVERSE CHARACTERISTICS
100
12
5 10
20
NUMBER OF CYCLES AT 60Hz
50 100
FIG.4- TYPICAL JUNCTION CAPACITANCE
300
250
200
150
100
Tj=250C
50 f=1.0MHz
Vsig=50mVp-p
0.1 0.5 1.0
5 10
50 100
REVERSE VOLTAGE. (V)
500 1000
40
Tj=1250C
10
4 Tj=750C
2
1.0
.4
.2 Tj=250C
.1
0 20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
- 403 -


Part Number FRA1002G
Description (FRA1001G - FRA1007G) 10 Amps / Glass Passivated Fast Recovery Rectifiers
Maker Taiwan Semiconductor
Total Page 2 Pages
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