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  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

FRA1603G Datasheet

(FRA1601G - FRA1607G) Glass Passivated Fast Recovery Rectifiers

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FRA1603G pdf
FRA1601G THRU FRA1607G
16.0 AMPS. Glass Passivated Fast Recovery Rectifiers
Voltage Range
50 to 1000 Volts
Current
16.0 Amperes
Features
TO-220A
www.DataSheet4U.net
Low forward voltage drop
High current capability
High reliability
High surge current capability
Mechanical Data
Cases: Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Terminals: Leads solderable per
MIL-STD-202, Method 208 guaranteed
Polarity: As marked
High temperature soldering guaranteed:
260/10 seconds .16”,(4.06mm) from
case.
Mounting position: Any
Weight: 2.24 grams
.113(2.87)
.103(2.62)
.412(10.5)
MAX
DIA
.154(3.91)
.148(3.74)
.27(6.86)
.23(5.84)
.594(15.1)
.587(14.9)
.185(4.70)
.175(4.44)
.055(1.40)
.045(1.14)
.16(4.06)
.14(3.56)
PIN1
2
.037(0.94)
.027(0.68)
.56(14.22)
.53(13.46)
.11(2.79)
.10(2.54)
.205(5.20)
.195(4.95)
.025(0.64)
.014(0.35)
PIN 1
PIN 2
CASE
Case Positive
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol FRA FRA FRA FRA FRA FRA FRA Units
1601G 1602G 1603G 1604G 1605G 1606G 1607G
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
See Fig. 2
VRRM
VRMS
VDC
I(AV)
50 100 200 400 600 800 1000 V
35 70 140 280 420 560 700 V
50 100 200 400 600 800 1000 V
16.0 A
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
IFSM
250
A
Maximum Instantaneous Forward Voltage
@ 16.0A
VF
1.3 V
Maximum DC Reverse Current @ TC=25
at Rated DC Blocking Voltage @ TC=125
IR
5.0 uA
100 uA
Maximum Reverse Recovery Time ( Note 1) Trr
150 250 500 nS
Typical Thermal resistance (Note 2)
RθJC
Operating and Storage Temperature Range TJ ,TSTG
2.5
-65 to +150
/W
Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
2. Thermal Resistance from Junction to Case Per Leg Mounted on Heatsink size 2” x
3” x 0.25” Al-Plate
- 464 -


  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

FRA1603G Datasheet

(FRA1601G - FRA1607G) Glass Passivated Fast Recovery Rectifiers

No Preview Available !

FRA1603G pdf
RATINGS AND CHARACTERISTIC CURVES (FRA1601G THRU FRA1607G)
FIG.1- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50W
NONINDUCTIVE
10W
NONINDUCTIVE
(+)
50Vdc
(approx)
(-)
DUT
1W
NON
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
(-)
PULSE
GENERATOR
(NOTE 2)
(+)
+0.5A
0
-0.25A
trr
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
FIG.2- MAXIMUM FORWARD CURRENT DERATING
CURVE
20.0
16.0
-1.0A
1cm
SET TIME BASE FOR
5/ 10ns/ cm
FIG.5- TYPICAL REVERSE CHARACTERISTICS
1000
12.0
8.0
100
Tj=1250C
4.0
0
0 50 100
CASE TEMPERATURE. (oC)
150
FIG.3- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
300
250 8.3ms Single Half Sine Wave
JEDEC Method
200
150
100
50
0
12
5 10
20
NUMBER OF CYCLES AT 60Hz
50 100
FIG.4- TYPICAL JUNCTION CAPACITANCE
300
250
200
150
100
Tj=250C
50 f=1.0MHz
Vsig=50mVp-p
0
0.1
0.5 1.0
5 10
50
REVERSE VOLTAGE. (V)
100
500 1000
10
Tj=250C
1.0
0.1
0 20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FIG.6- TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
80
40
20
10
4
2
1.0
.4
Tj=25oC
.2 Pulse Width=300 s
1% Duty Cycle
.1
.8 .9 1.0 1.1 1.2 1.3 1.4 1.5
INSTANTANEOUS FORWARD VOLTAGE. (V)
- 465 -


Part Number FRA1603G
Description (FRA1601G - FRA1607G) Glass Passivated Fast Recovery Rectifiers
Maker Taiwan Semiconductor
Total Page 2 Pages
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