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G40N120CE - TSG40N120CE

General Description

The TSG40N120CE using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.

Key Features

  • Block Diagram.
  • 1200V NPT Trench Technology.
  • High Speed Switching.
  • Low Conduction Loss Ordering Information Part No. TSG40N120CE C0 Package TO-264 Packing 25pcs / Tube NPT Trench IGBT Absolute Maximum Rating (TA=25oC unless otherwise noted) Parameter Symbol Collector-Emitter Voltage Gate-Emitter Voltage Continuous Current TC=25oC TC=100oC VCES VGES IC Pulsed Collector Current.
  • Diode Forward Current (TC=100℃) Diode Pulse Forward Current Max Power Dissipation TJ.

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TO-264 Pin Definition: 1. Gate 2. Collector 3. Emitter TSG40N120CE N-Channel IGBT with FRD. PRODUCT SUMMARY VCES (V) VGES (V) 1200 ±20 IC (A) 40 General Description The TSG40N120CE using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating, microwave oven, etc. Features Block Diagram ● 1200V NPT Trench Technology ● High Speed Switching ● Low Conduction Loss Ordering Information Part No.