G40N120CE - TSG40N120CE

Name: G40N120CE
SKU: G40N120CE-924853

Taiwan Semiconductor

📥 Download Datasheet

G40N120CE Datasheet Preview — Preview of G40N120CE PDF

Datasheet Details

Part number	G40N120CE
Manufacturer	Taiwan Semiconductor
File Size	649.41 KB
Description	TSG40N120CE
Datasheet	G40N120CE-TaiwanSemiconductor.pdf

G40N120CE Product details

Description

The TSG40N120CE using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.

Features

Block Diagram.
1200V NPT Trench Technology.
High Speed Switching.
Low Conduction Loss Ordering Information Part No. TSG40N120CE C0 Package TO-264 Packing 25pcs / Tube NPT Trench IGBT Absolute Maximum Rating (TA=25oC unless otherwise noted) Parameter Symbol Collector-Emitter Voltage Gate-Emitter Voltage Continuous Current TC=25oC TC=100oC VCES VGES IC Pulsed Collector Current.
Diode Forward Current (TC=100℃) Diode Pulse Forward Current Max Power Dissipation TJ.

📁 G40N120CE Similar Datasheet

G40N150D - FGL40N150D (Fairchild)
G40N03A - N-Channel Enhancement Mode Power MOSFET (GFD)
G40N60 - Ultrafast IGBT (Fairchild Semiconductor)
G40N60A4 - HGTG40N60A4 (Fairchild Semiconductor)
G40N60C3 - HGTG40N60C3 (Fairchild Semiconductor)
G40N60UFD - FGA40N60UFD (Fairchild Semiconductor)
G40 - Voltage-Controlled Attenuator Module (MACOM)
G4000EC450 - Anode Shorted Gate Turn-Off Thyristor (IXYS)

Other Datasheets by Taiwan Semiconductor

Published: Jun 23, 2015 |