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  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

HER301G Datasheet

Glass Passivated High Efficient Rectifiers

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HER301G thru HER308G
Taiwan Semiconductor
CREAT BY ART
Glass Passivated High Efficient Rectifiers
FEATURES
- Glass passivated chip junction
- High current capability, Low VF
- High reliability
- High surge current capability
- Low power loss, high efficiency
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: DO-201AD
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Weight: 1.1 g (approximately)
DO-201AD
MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (TA=25unless otherwise noted)
PARAMETER
HER HER HER HER HER
SYMBOL
301G 302G 303G 304G 305G
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
VRRM
VRMS
VDC
IF(AV)
50 100 200 300 400
35 70 140 210 280
50 100 200 300 400
3
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
125
HER
306G
600
420
600
HER
307G
800
560
800
HER
308G
1000
700
1000
Maximum instantaneous forward voltage (Note 1)
@3A
VF
1.0 1.3 1.7
Maximum reverse current @ rated VR TJ=25
TJ=125
Maximum reverse recovery time (Note 2)
IR
Trr
Typical junction capacitance (Note 3)
Cj
Typical thermal resistance
RθjL
RθjA
Operating junction temperature range
Storage temperature range
Note 1: Pulse Test with PW=300μs, 1% Duty Cycle
TJ
TSTG
Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
10
200
50
60
10
35
- 55 to +150
- 55 to +150
75
35
UNIT
V
V
V
A
A
V
μA
ns
pF
OC/W
OC
OC
Document Number: DS_D1405022
Version: F14


  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

HER301G Datasheet

Glass Passivated High Efficient Rectifiers

No Preview Available !

CREAT BY ART
ORDERING INFORMATION
PART NO.
AEC-Q101 PACKING CODE GREEN COMPOUND
QUALIFIED
A0
CODE
HER30xG
(Note 1)
Prefix "H"
R0
B0
Suffix "G"
X0
Note 1: "x" defines voltage from 50V (HER301G) to 1000V (HER308G)
PACKAGE
DO-201AD
DO-201AD
DO-201AD
DO-201AD
HER301G thru HER308G
Taiwan Semiconductor
PACKING
500 / Ammo box
1,250 / 13" Paper reel
500 / Bulk packing
Forming
EXAMPLE
PREFERRED P/N PART NO.
HER308G A0
HER308G A0G
HER308GHA0
HE308G
HE308G
HE308G
AEC-Q101
QUALIFIED
H
PACKING CODE
A0
A0
A0
GREEN COMPOUND
CODE
G
DESCRIPTION
Green compound
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA=25unless otherwise noted)
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
4.0
RESISTIVE OR
3.0 INDUCTIVE LOAD
2.0
1.0
0.0
0
25 50 75 100 125 150 175
CASE TEMPERATURE (oC)
1000
FIG. 2- TYPICAL REVERSE CHARACTERISTICS
100 TJ=125
10
1 TJ=75
0.1
0.01
0
TJ=25
20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
250
225
200
175
150
125
100
75
50
25
0
1
FIG. 3- MAXIMUM NON-REPETITIVE FORWARD SURGE
CURRENT
8.3ms Single Half Sine Wave
10 100
NUMBER OF CYCLES AT 60 Hz
1000
FIG. 4- TYPICAL FORWARD CHARACTERISTICS
100
10
HER301G-HER304G
HER305G
1 HER306G-HER308G
0.1
0
0.2 0.4 0.6 0.8
1
FORWARD VOLTAGE (V)
1.2 1.4
Document Number: DS_D1405022
Version: F14


Part Number HER301G
Description Glass Passivated High Efficient Rectifiers
Maker Taiwan Semiconductor
PDF Download

HER301G Datasheet PDF






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