HER301G thru HER308G
Taiwan Semiconductor
CREAT BY ART
Glass Passivated High Efficient Rectifiers
FEATURES
- Glass passivated chip junction
- High current capability, Low VF
- High reliability
- High surge current capability
- Low power loss, high efficiency
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: DO-201AD
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Weight: 1.1 g (approximately)
DO-201AD
MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (TA=25℃ unless otherwise noted)
PARAMETER
HER HER HER HER HER
SYMBOL
301G 302G 303G 304G 305G
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
VRRM
VRMS
VDC
IF(AV)
50 100 200 300 400
35 70 140 210 280
50 100 200 300 400
3
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
125
HER
306G
600
420
600
HER
307G
800
560
800
HER
308G
1000
700
1000
Maximum instantaneous forward voltage (Note 1)
@3A
VF
1.0 1.3 1.7
Maximum reverse current @ rated VR TJ=25 ℃
TJ=125 ℃
Maximum reverse recovery time (Note 2)
IR
Trr
Typical junction capacitance (Note 3)
Cj
Typical thermal resistance
RθjL
RθjA
Operating junction temperature range
Storage temperature range
Note 1: Pulse Test with PW=300μs, 1% Duty Cycle
TJ
TSTG
Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
10
200
50
60
10
35
- 55 to +150
- 55 to +150
75
35
UNIT
V
V
V
A
A
V
μA
ns
pF
OC/W
OC
OC
Document Number: DS_D1405022
Version: F14
