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  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

MBR10200CT Datasheet

Dual Common Cathode Schottky Rectifiers

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MBR1035CT - MBR10200CT
Taiwan Semiconductor
CREAT BY ART
10A, 35V - 200V Dual Common Cathode Schottky Rectifiers
FEATURES
- Low power loss, high efficiency
- Guard ring for over-voltage protection
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
MECHANICAL DATA
Case: TO-220AB
Molding compound, UL flammability classification rating 94V-0
Part No. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity: As marked
Mounting torque: 0.56 Nm max.
Weight: 1.88 g (approximately)
TO-220AB
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
MBR MBR MBR MBR MBR MBR MBR MBR
PARAMETER
SYMBOL 1035 1045 1050 1060 1090 10100 10150 10200
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak repetitive forward current
(Rated VR, Square Wave, 20KHz)
VRRM
VRMS
VDC
IF(AV)
IFRM
CT CT CT CT CT CT CT CT
35 45 50 60 90 100 150 200
24 31 35 42 63 70 105 140
35 45 50 60 90 100 150 200
10
10
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
120
Peak repetitive reverse surge current (Note 1)
IRRM
1
0.5
Maximum instantaneous forward voltage (Note 2)
IF= 5 A, TJ=25°C
IF= 5 A, TJ=125°C
IF= 10 A, TJ=25°C
IF= 10 A, TJ=125°C
0.70 0.80 0.85 0.88
VF 0.57 0.65 0.75 0.78
0.80 0.90 0.95 0.98
0.67 0.75 0.85 0.88
Maximum reverse current @ rated VR
Voltage rate of change (Rated VR)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: tp = 2.0 μs, 1.0KHz
TJ=25°C
TJ=125°C
IR
dV/dt
RθJC
TJ
TSTG
15
0.1
10 2
10000
1.5
- 55 to +150
- 55 to +150
5
Note 2: Pulse test with PW=300μs, 1% duty cycle
UNIT
V
V
V
A
A
A
A
V
mA
V/μs
°C/W
°C
°C
Version: N1512


  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

MBR10200CT Datasheet

Dual Common Cathode Schottky Rectifiers

No Preview Available !

MBR1035CT - MBR10200CT
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
PART NO.
SUFFIX
PACKING CODE
PACKING CODE
SUFFIX (*)
MBR10xxCT
(Note 1)
H
C0
G
Note 1: "xx" defines voltage from 35V (MBR1035CT) to 200V (MBR10200CT)
*: Optional available
PACKAGE
TO-220AB
PACKING
50 / Tube
EXAMPLE
EXAMPLE
PART NO.
MBR1060CTHC0G
PART NO.
MBR1060CT
PART NO.
SUFFIX
H
PACKING CODE
C0
PACKING CODE
SUFFIX
G
DESCRIPTION
AEC-Q101 qualified
Green compound
RATINGS AND CHARACTERISTICS CURVES
(TA=25°C unless otherwise noted)
FIG.1 FORWARD CURRENT DERATING CURVE
12
10
8
6
4
Resistive or
2 inductive load
with heat sink
0
0 50
100
CASE TEMPERATURE (°C)
150
1000
100
FIG. 3 TYPICAL FORWARD CHARACTERISTICS
Pulse width=300μs
1% duty cycle
MBR1050CT-1060CT
10 MBR1035CT-1045CT
1
MBR1090CT-10100CT
MBR10150-10200CT
0.1
0.2
0.4 0.6 0.8
1
FORWARD VOLTAGE (V)
1.2
1.4
180
150
120
90
60
30
0
1
FIG. 2 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
8.3ms single half sine wave
10
NUMBER OF CYCLES AT 60 Hz
100
FIG. 4 TYPICAL REVERSE CHARACTERISTICS
100
10
TJ=125°C
1
TJ=75°C
0.1
0.01
0.001
0
TJ=25°C
20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Version: N1512


Part Number MBR10200CT
Description Dual Common Cathode Schottky Rectifiers
Maker Taiwan Semiconductor
Total Page 4 Pages
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