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MBR20100CT-Y Datasheet

Manufacturer: Taiwan Semiconductor

This datasheet includes multiple variants, all published together in a single manufacturer document.

MBR20100CT-Y datasheet preview

Datasheet Details

Part number MBR20100CT-Y
Datasheet MBR20100CT-Y MBR2035CT-Y Datasheet (PDF)
File Size 205.21 KB
Manufacturer Taiwan Semiconductor
Description Dual Common Cathode Schottky Rectifier
MBR20100CT-Y page 2 MBR20100CT-Y page 3

MBR20100CT-Y Overview

3- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS PER LEG 100 PEAK FORWARD SURGE CURRENT (A) 150 125 100 75 50 25 0 1 FIG. 2- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PER LEG 8.3ms Single Half.

MBR20100CT-Y Key Features

  • Low power loss, high efficiency
  • Guardring for overvoltage protection
  • High surge current capability
  • pliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
  • Halogen-free according to IEC 61249-2-21 definition
  • green pound (halogen-free)
  • 0.80 0.85 0.99
  • 55 to +150
  • 55 to +150

MBR20100CT-1 from other manufacturers

See all manufacturers

Brand Logo Part Number Description Other Manufacturers
International Rectifier Logo MBR20100CT-1 SCHOTTKY RECTIFIER International Rectifier
International Rectifier Logo MBR20100CT-1PbF SCHOTTKY RECTIFIER International Rectifier
Vishay Logo MBR20100CT-E3 Dual Common-Cathode High Voltage Trench MOS Barrier Schottky Rectifier Vishay
Vishay Logo MBR20100CT-M3 Dual High Voltage Trench MOS Barrier Schottky Rectifier Vishay
Vishay Logo MBR20100CT-N3 Schottky Rectifier Vishay
Taiwan Semiconductor logo - Manufacturer

More Datasheets from Taiwan Semiconductor

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MBR20100CT-Y Distributor

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