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MBR20H100CT - MBR20H200CT
20.0AMPS. Schottky Barrier Rectifiers
TO-220AB
Features
Plastic material used carriers Underwriters
Laboratory Classification 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in power supply - output rectification, power
management, instrumentation
Guard-ring for overvoltage protection
High temperature soldering guaranteed:
260℃/10 seconds 0.25", (6.35mm) from case
Green compound with suffix "G" on packing
code & prefix "G" on datecode
Mechanical Data
Cases: JEDEC TO-220AB molded plastic body
Terminals: Pure tin plated, lead free, solderable
per MIL-STD-750, Method 2026
Polarity: As marked
Mounting position:Any
Mounting torque: 5 in. - lbs, max
Weight: 1.82 grams
Dimensions in inches and (millimeters)
Marking Diagram
MBR20HXXCT = Specific Device Code
G = Green Compound
Y = Year
WW = Work Week
Maximum Ratings and Electrical Characteristics
Rating at 25 ℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol
MBR
20H100CT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
VRRM
VRMS
VDC
100
70
100
MBR
20H150CT
150
105
150
MBR
20H200CT
200
140
200
Maximum Average Forward Rectified Current
IF(AV)
20
Peak Repetitive Surge Current
(Rated VR, Square Wave, 20KHz)
Peak Forward Surge Current, 8.3 ms Single Half Sine-
wave Superimposed on Rated Load (JEDEC Method)
Peak Repetitive Reverse Surge Current (Note 1)
Maximum Instantaneous Forward Voltage at (Note 2)
IF=10A, TA=25℃
IF=10A, TA=125℃
IF=20A, TA=25℃
IF=20A, TA=125℃
Maximum Instantaneius Reverse
Current at Rated DC Blocking Voltage
Voltage Rate of Change,(Rated VR)
Maximum Typical Thermal Resistance
@ TA=25 ℃
@ TA=125 ℃
Operating Junction Temperature Range
Storage Temperature Range
Note 1: 2.0uS Pulse Width, f=1.0KHz
Note 2: Pulse Test : 300uS Pulse Width, 1% Duty Cycle
IFRM
IFSM
IRRM
VF
IR
dV/dt
RθJC
TJ
TSTG
20
150
1.0
0.5
0.85
0.75
0.95
0.85
0.88
0.75
0.97
0.85
5
2
10,000
1.5
- 65 to + 175
- 65 to + 175
Units
V
V
V
A
A
A
A
V
uA
mA
V/us
OC/W
OC
OC
Version:E11
