MBR2590CT Datasheet | Taiwan Semiconductor

MBR2535CT thru MBR25150CT Taiwan Semiconductor CREAT BY ART Dual mon Cathode Schottky Rectifier Features - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - pliant to Ro HS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: TO-220AB Molding pound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - halogen-free Base P/N with prefix "H" on packing code - AEC-Q101 qualified Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test, with prefix "H" on packing code meet JESD 201 class 2 whisker test Polarity: As marked Mounting torque: 5 in-lbs maximum Weight: 1.9 g (approximately) TO-220AB MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) MBR MBR MBR MBR MBR MBR MBR PARAMETER SYMBOL 2535 2545 2550 2560 2590 25100 25150 Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current VRRM VRMS VDC IF(AV) CT CT CT CT CT CT CT 35 45 50 60 90 100 150 24 31 35 42 63 70 105 35 45 50 60 90 100 150 Peak repetitive forward current (Rated VR, square wave, 20KHz) IFRM UNIT Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load Peak repetitive reverse surge current (Note 1) Maximum instantaneous forward voltage (Note 2) IF=12.5A, TJ=25℃ IF=12.5A, TJ=125℃ IF=25A, TJ=25℃ IF=25A, TJ=125℃ Maximum reverse current @ rated VR TJ=25 ℃ TJ=125 ℃ Voltage rate of change (Rated VR) Typical thermal resistance Operating junction temperature range Storage temperature range Note 1: tp = 2.0 μs, 1.0KHz Note 2: Pulse test with PW=300μs, 1% duty...