MBR3060PT Datasheet | Taiwan Semiconductor

MBR3035PT - MBR30150PT 30.0 AMPS. Schottky Barrier Rectifiers TO-3P/TO-247AD Features Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop High surge capability For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications Guardring for overvoltage protection High temperature soldering guaranteed: o 260 C/10 seconds,0.17”(4.3mm)from case Mechanical Data Cases: JEDEC TO-3P/TO-247AD molded plastic body Terminals: Pure tin plated, lead free. solderable per MIL-STD-750, Method 2026 Polarity: As marked Mounting position: Any Mounting torque: 10 in. - lbs. max Weight: 0.2 ounce, 5.6 grams Dimensions in inches and (millimeters) Rating at C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Symbol MBR MBR Type Number 3035 PT 3045 PT Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current (SEE F1G. 1) Peak Repetitive Forward Current (Rated V R, Square Wave, 20KHz) at Tc=105o C Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Peak Repetitive Reverse Surge Current (Note 2) Maximum Instantaneous Forward Voltage at (Note 1) IF=15A, Tc=25o C IF=15A, Tc=125o C o IF=30A, Tc=25 C o IF=30A, Tc=125 C Maximum Instantaneous Reverse Current @ Tc=25 C at Rated DC Blocking Voltage Per Leg(Note 2) @ Tc=125 o C Voltage Rate of Change at (Rated VR) Maximum Thermal Resistance Per Leg(Note 3) Operating Junction Temperature Range Storage Temperature Range o Maximum Ratings and Electrical Characteristics o MBR 3050 PT MBR 3060 PT MBR 3090 PT MBR MBR 30100 30150 PT PT Units V V V A A A VRRM VRMS VDC I(AV) IFRM IFSM IRRM VF IR d V/dt RθJC TJ TSTG 35 24 35 45 31 45 50 35 50 60...