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  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

MBRF30200CT Datasheet

Dual Common Cathode Schottky Rectifier

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MBRF3035CT thru MBRF30200CT
Taiwan Semiconductor
CREAT BY ART
Dual Common Cathode Schottky Rectifier
FEATURES
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- UL Recognized File # E-326243
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: ITO-220AB
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity: As marked
Mounting torque: 5 in-lbs maximum
Weight: 1.7 g (approximately)
ITO-220AB
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)
MBRF MBRF MBRF MBRF MBRF MBRF MBRF MBRF
PARAMETER
SYMBOL 3035 3045 3050 3060 3090 30100 30150 30200 UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
VRRM
VRMS
VDC
IF(AV)
CT CT CT CT CT CT CT CT
35 45 50 60 90 100 150 200
24 31 35 42 63 70 105 140
35 45 50 60 90 100 150 200
30
V
V
V
A
Peak repetitive forward current
(Rated VR, Square wave, 20KHz)
IFRM
30 A
Peak forward surge current, 8.3 ms single half
sine-wave superimposed on rated load
IFSM
200 A
Peak repetitive reverse surge current (Note 1)
Maximum instantaneous forward voltage (Note 2)
IF=15A, TJ=25
IF=15A, TJ=125
IF=30A, TJ=25
IF=30A, TJ=125
Maximum reverse current @ rated VR TJ=25
TJ=125
Voltage rate of change (Rated VR)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: tp = 2.0 μs, 1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
IRRM
VF
IR
dV/dt
RθJC
TJ
TSTG
1
0.70
0.60
0.82
0.73
20
0.5
0.75 0.84 0.95
0.65 0.70 0.80
0.90 0.94 1.05
0.78 0.82 0.92
0.2
15 10
10000
4
- 55 to +150
- 55 to +150
A
V
mA
V/μs
OC/W
OC
OC
Document Number: DS_D1308022
Version: L13


  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

MBRF30200CT Datasheet

Dual Common Cathode Schottky Rectifier

No Preview Available !

MBRF3035CT thru MBRF30200CT
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
AEC-Q101
PACKING CODE GREEN COMPOUND
MBRF30xxCT
(Note 1)
QUALIFIED
Prefix "H"
C0
CODE
Suffix "G"
Note 1: "xx" defines voltage from 35V (MBRF3035CT) to 200V (MBRF30200CT)
PACKAGE
ITO-220AB
PACKING
50 / Tube
EXAMPLE
PREFERRED P/N
MBRF3060CT C0
MBRF3060CT C0G
MBRF3060CTHC0
PART NO.
MBRF3060CT
MBRF3060CT
MBRF3060CT
AEC-Q101
QUALIFIED
H
PACKING CODE
C0
C0
C0
GREEN COMPOUND
CODE
DESCRIPTION
G Green compound
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA=25unless otherwise noted)
FIG.1 FORWARD CURRENT DERATING CURVE
35
30
25
20
15
10 RESISTIVE OR
INDUCTIVELOAD
5 WITH HEATSINK
0
50 60 70 80 90 100 110 120 130 140 150
CASE TEMPERATURE (oC)
FIG. 3 TYPICAL FORWARD CHARACTERISTICS
PER LEG
100
Pulse Width=300μs
1% Duty Cycle
10 MBRF3035CT-3045CT
1
MBRF3050CT-3060CT
MBRF3090CT-30100CT
0.1
MBRF30150CT-30200CT
0.01
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
FORWARD VOLTAGE (V)
225
200
175
150
125
100
75
50
1
FIG. 2 MAXIMUM NON-REPETITIVE FORWARD SURGE
CURRENT PER LEG
8.3ms Single Half Sine Wave
JEDEC Method
10
NUMBER OF CYCLES AT 60 Hz
100
FIG. 4 TYPICAL REVERSE CHARACTERISTICS
PER LEG
100
TJ=125
10
1 TJ=75
0.1
TJ=25
0.01
0.001
0
MBRF3035CT - 3045CT
MBRF3050CT - 30200CT
20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Document Number: DS_D1308022
Version: L13


Part Number MBRF30200CT
Description Dual Common Cathode Schottky Rectifier
Maker Taiwan Semiconductor
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MBRF30200CT Datasheet PDF






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Taiwan Semiconductor





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