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  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

MMBT3904 Datasheet

NPN Transistor

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Small Signal Product
MMBT3904
Taiwan Semiconductor
300mW, NPN Small Signal Transistor
FEATURES
- Epitaxial planar die construction
- Surface device type mounting
- Moisture sensitivity level 1
- Matte Tin (Sn) lead finish with Nickel (Ni) underplate
- Pb free version and RoHS compliant
- Packing code with suffix "G" means
green compound (halogen-free)
SOT-23
MECHANICAL DATA
- Case: SOT- 23, molded plastic
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260oC/10s
- Weight: 0.008g (approximately)
- Marking Code: 1AM
MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (TA=25unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Power Dissipation
PD 300
Collector-Base Voltage
VCBO
60
Collector-Emitter Voltage
VCEO
40
Emitter-Base Voltage
VEBO
6
Collector Current
IC 200
Junction and Storage Temperature Range
TJ , TSTG
-55 to +150
Notes:1. Valid provided that electrodes are kept at ambient temperature
UNIT
mW
V
V
V
mA
oC
PARAMETER
Collector-Base Breakdown Voltage
IC = 10 μA IE = 0
Collector-Emitter Breakdown Voltage
IC = 1 mA
IB = 0
Emitter-Base Breakdown Voltage
IE = 10 μA IC = 0
Collector Cut-off Current
VCB = 60 V IE = 0
Collector Cut-off Current
VCE = 30 V
VBE(OFF) = 3 V
Emitter Cut-off Current
VEB = 5 V
IC = 0
VCE = 1 V
IC = 10 mA
DC Current Gain
VCE = 1 V
IC = 50 mA
VCE = 1 V
IC = 100 mA
Collector-Emitter Saturation Voltage
IC = 50 mA IB = 5 mA
Base-Emitter Saturation Voltage
IC = 50 mA IB = 5 mA
Transition frequency
VCE = 20 V
IC = 10 mA f= 100MHz
Delay time
VCC = 3 V
VBE = 0.5 V IC = 10 mA
Rise time
IB1 = 1.0 mA
Storage time
VCC = 3 V
IC = 10 mA
Fall time
IB1 = IB2 = 1.0 mA
Document Number: DS_S1412034
SYMBOL
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
td
tr
ts
tf
MIN
60
40
6
-
-
-
100
60
30
-
-
250
-
-
-
-
MAX
-
-
-
0.1
50
0.1
400
-
-
0.3
0.95
-
35
35
200
50
UNIT
V
V
V
μA
nA
μA
V
V
MHz
ns
ns
ns
ns
Version: D14


  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

MMBT3904 Datasheet

NPN Transistor

No Preview Available !

Small Signal Product
RATINGS AND CHARACTERISTICS CURVES
(TA=25°C unless otherwise noted)
Fig.1 Typical Pulsed Current Gain
VS. Collector Current
500
400 125 °C
VCE = 5V
300
25 °C
200
100 - 40 °C
0
0.1
1.0 10.0
IC - Collector Current (mA)
100.0
Fig. 3 Base-Emitter Saturation Voltage
VS. Collector Current
1.1
1
β = 10
0.9
0.8
0.7 - 40 °C
0.6
25 °C
0.5
0.4
0.3
0.1
125 °C
1 10
IC - Collector Current (mA)
1000
100
Fig. 5 Collector-Cutoff Current
VS. Ambient Temperature
VCB= 30V
100
10
1
0.1
0.01
25
50 75 100 125
TA - Ambient Temperature (OC)
150
MMBT3904
Taiwan Semiconductor
0.20
0.15
0.10
0.05
0.00 0
Fig. 2 Collector-Emitter Saturation Voltage
VS. Collector Current
β = 10
125 °C
25 °C
- 40 °C
1 10 100
IC - Collector Current (mA)
Fig. 4 Base-Emitter On Voltage
VS. Collector Current
1
VCE= 5V
0.8 - 40 °C
0.6 25 °C
0.4 125 °C
0.2
0.1
10
1 10
IC - Collector Current (mA)
100
Fig. 6 Capacitance VS.
Reverse Bias Voltage
f = 1.0 MHz
1
0.1
C ibo
Cobo
1 10
Reverse Bias Voltage (V)
100
Document Number: DS_S1412034
Version: D14


Part Number MMBT3904
Description NPN Transistor
Maker Taiwan Semiconductor
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MMBT3904 Datasheet PDF






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