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  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

SK33B Datasheet

Surface Mount Schottky Barrier Rectifier

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SK32B - SK320B
Taiwan Semiconductor
3A, 20V - 200V Surface Mount Schottky Barrier Rectifier
FEATURES
Low power loss, high efficiency
Ideal for automated placement
Guard ring for over-voltage protection
High surge current capability
Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21
APPLICATIONS
Switching mode power supply (SMPS)
Adapters
Lighting application
Converter
KEY PARAMETERS
PARAMETER
VALUE
UNIT
IF(AV)
VRRM
3
20 - 200
A
V
IFSM
Package
70 A
DO-214AA (SMB)
Configuration
Single Die
MECHANICAL DATA
Case: DO-214AA (SMB)
Molding compound meets UL 94V-0 flammability rating
Part no. with suffix Hmeans AEC-Q101 qualified
Packing code with suffix "G" means green compound
(halogen-free)
Moisture sensitivity level: level 1, per J-STD-020
Terminal: Matte tin plated leads, solderable per J-STD-002
Meet JESD 201 class 2 whisker test
Polarity: As marked
Weight: 0.1 g (approximately)
DO-214AA (SMB)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL SK SK SK SK SK SK SK SK SK
32B 33B 34B 35B 36B 39B 310B 315B 320B
Marking code on the device
SK SK SK SK SK SK SK SK SK
32B 33B 34B 35B 36B 39B 310B 315B 320B
Repetitive peak reverse voltage
VRRM
20 30 40 50 60 90 100 150 200
Reverse voltage, total rms value
VR(RMS)
14 21 28 35 42 63 70 105 140
Maximum DC blocking voltage
VDC 20 30 40 50 60 90 100 150 200
Forward current
Surge peak forward current, 8.3 ms
single half sine-wave superimposed
on rated load per diode
Critical rate of rise of off-state voltage
IF(AV)
IFSM
dV/dt
3
70
10000
Junction temperature
TJ - 55 to +125
- 55 to +150
Storage temperature
TSTG
- 55 to +150
UNIT
V
V
V
A
A
V/μs
°C
°C
1 Version:N1705


  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

SK33B Datasheet

Surface Mount Schottky Barrier Rectifier

No Preview Available !

SK32B - SK320B
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
Junction-to-lead thermal resistance
Junction-to-ambient thermal resistance
SYMBOL
RӨJL
RӨJA
LIMIT
23
63
UNIT
°C/W
°C/W
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
CONDITIONS SYMBOL
SK32B
SK33B
SK34B
SK35B
Forward voltage per diode (1)
SK36B
SK39B
IF = 3A,TJ = 25°C
VF
SK310B
SK315B
SK320B
SK32B
SK33B
SK34B
Reverse current @ rated VR per
diode (2)
SK35B
SK36B
SK39B
TJ = 25°C
IR
SK310B
SK315B
SK320B
SK32B
SK33B
SK34B
Reverse current @ rated VR per
diode (2)
SK35B
SK36B
SK39B
TJ = 100°C
IR
SK310B
SK315B
SK320B
SK32B
SK33B
SK34B
Reverse current @ rated VR per
diode (2)
SK35B
SK36B
SK39B
TJ = 125°C
IR
SK310B
SK315B
SK320B
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
TYP
-
-
-
-
-
-
-
-
-
-
-
-
2
MAX
0.50
0.75
0.85
0.95
0.5
0.1
10
5
-
-
-
2
UNIT
V
V
V
V
V
V
V
V
V
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Version:N1705


Part Number SK33B
Description Surface Mount Schottky Barrier Rectifier
Maker Taiwan Semiconductor
Total Page 7 Pages
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