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  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

SS33 Datasheet

Surface Mount Schottky Barrier Rectifier

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SS32 - SS320
Taiwan Semiconductor
3A, 20V - 200V Surface Mount Schottky Barrier Rectifier
FEATURES
Low power loss, high efficiency
Ideal for automated placement
Guard ring for over-voltage protection
High surge current capability
Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER VALUE
UNIT
IF(AV)
3A
VRRM
20 - 200
V
Package
DO-214AB (SMC)
Configuration
Single die
APPLICATIONS
Switching mode power supply (SMPS)
Adapters
Lighting application
Converter
MECHANICAL DATA
Case: DO-214AB (SMC)
Molding compound meets UL 94V-0 flammability rating
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound
(halogen-free)
Moisture sensitivity level: level 1, per J-STD-020
Terminal: Matte tin plated leads, solderable per J-STD-002
Meet JESD 201 class 2 whisker test
Polarity: As marked
Weight: 0.21 g (approximately)
DO-214AB (SMC)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SS SS SS SS SS
SYMBOL 32 33 34 35 36
Marking code on the device
SS SS SS SS SS
32 33 34 35 36
SS SS
39 310
SS SS
39 310
Repetitive peak reverse voltage
VRRM
20 30 40 50 60 90 100
Reverse voltage, total rms value
VR(RMS)
14 21 28 35 42 63 70
Maximum DC blocking voltage
VDC 20 30 40 50 60 90 100
Forward current
Surge peak forward current, 8.3
ms single half sine-wave
superimposed on rated load per
diode
Critical rate of rise of off-state
voltage
IF(AV)
IFSM
dV/dt
100
3
10,000
75
Junction temperature
TJ - 55 to +125
- 55 to +150
Storage temperature
TSTG
- 55 to +150
SS
315
SS
315
150
105
150
SS
320
SS
320
200
UNIT
V
140 V
200 V
A
A
V/µ s
°C
°C
1 Version:M1708


  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

SS33 Datasheet

Surface Mount Schottky Barrier Rectifier

No Preview Available !

SS32 - SS320
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
Junction-to-lead thermal resistance per diode
Junction-to-ambient thermal resistance per diode
SYMBOL
RӨJL
RӨJA
LIMIT
17
55
UNIT
°C/W
°C/W
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL
Forward voltage per diode (1)
Forward voltage per diode (1)
Reverse current @ rated VR per
diode (2)
Reverse current @ rated VR per
diode (2)
Reverse current @ rated VR per
diode (2)
SS32
SS33
SS34
SS35
SS36
SS39
SS310
SS315
SS320
SS32
SS33
SS34
SS35
SS36
SS39
SS310
SS315
SS320
SS32
SS33
SS34
SS35
SS36
SS39
SS310
SS315
SS320
SS32
SS33
SS34
SS35
SS36
SS39
SS310
SS315
SS320
SS32
SS33
SS34
SS35
SS36
SS39
SS310
SS315
SS320
IF = 3A, TJ = 25°C
IF = 3A, TJ = 100°C
TJ = 25°C
TJ = 100°C
TJ = 125°C
VF
VF
IR
IR
IR
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
TYP.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX.
0.50
0.75
0.85
0.95
0.40
0.65
0.70
0.80
0.5
0.1
10
5
-
-
-
0.5
UNIT
V
V
V
V
V
V
V
V
mA
mA
mA
mA
mA
mA
mA
mA
2 Version:M1708


Part Number SS33
Description Surface Mount Schottky Barrier Rectifier
Maker Taiwan Semiconductor
Total Page 7 Pages
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