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  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

TPAR3D Datasheet

200V - 600V Avalanche Fast Recovery Surface Mount Rectifiers

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TPAR3D - TPAR3J
Taiwan Semiconductor
CREAT BY ART
3A, 200V - 600V Avalanche Fast Recovery Surface Mount Rectifiers
FEATURES
- Very low profile, typical height of 1.1mm
- Excellent high temperature stability
- Glass passivated chip junction
- Controled avalanche characteristics
- Low leakage current
- High forward surge capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
TO-277A (SMPC)
MECHANICAL DATA
Case: TO-277A (SMPC)
Molding compound, UL flammability classification rating 94V-0
Moisture sensitivity level: level 1, per J-STD-020
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity: Indicated by cathode band
Weight: 95 mg (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (TA=25°C unless otherwise noted)
PARAMETER
Marking code
SYMBOL TPAR3D
AR3D
TPAR3G
AR3G
TPAR3J
AR3J
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
VRRM
200
400
600
IF(AV)
3
IFSM
60
Maximum instantaneous forward voltage
(1)
IF=3A
TJ=25°C
TJ=125°C
Maximum reverse current
Rated VR
TJ=25°C
TJ=125°C
Non-reprtitive avalanche energy
IAS = 2.5A Max
IAS = 1.0A Typ
Maximum reverse recovery time
IF=0.5A, IR=1A, IRR=0.25A
Typical thermal resistance
Typical junction capacitance (4)
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
VF
IR
EAS
trr
RθJM (2)
RθJA (3)
CJ
TJ
TSTG
TYP MAX
1.20 1.55
1.02 1.15
0.30 10
40 250
20
30
TYP MAX
95 120
28
75
58
- 55 to +175
- 55 to +175
Note 2: Junction to mounted, mounted on FR4 PCB with 16mm x 16mm Cu pad area
Note 3: Free air, mounted on recommned pad
Note 4: Measured at 1 MHz and Applied VR=4.0 Volts
UNIT
V
A
A
V
μA
mJ
ns
°C/W
pF
°C
°C
Document Number: DS_D0000012
Version: A15


  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

TPAR3D Datasheet

200V - 600V Avalanche Fast Recovery Surface Mount Rectifiers

No Preview Available !

ORDER INFORMATION (EXAMPLE)
TPAR3D S1G
Green compound code
Packing code
Part no.
RATINGS AND CHARACTERISTICS CURVES
(TA=25°C unless otherwise noted)
FIG.1 MAXIMUM FORWARD CURRENT
DERATING CURVE
4
3
2
1 RESISTER OR
INDUCTIVE LOAD
WITH HEATSINK
0
0 25 50 75 100 125 150 175
LEAD TEMPERATURE (oC)
FIG. 3 MAXIMUM NON-REPETITIVE FORWARD PEAK
SURGE CURRENT
100
8.3ms Single Half Sine Wave
75
50
25
0
1
10
NUMBER OF CYCLES AT 60 Hz
100
TPAR3D - TPAR3J
Taiwan Semiconductor
FIG. 2 TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
10
Pulse Width=300μs
1% Duty Cycle
TJ=125°C
1
TJ=25°C
0.1
0
0.2 0.4 0.6 0.8
1
FORWARD VOLTAGE (V)
1.2 1.4
FIG. 4 TYPICAL REVERSE CHARACTERISTICS
100
TJ=125°C
10
1
0.1
0.01
0
TJ=25°C
20 40 60 80 100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Document Number: DS_D0000012
Version: A15


Part Number TPAR3D
Description 200V - 600V Avalanche Fast Recovery Surface Mount Rectifiers
Maker Taiwan Semiconductor
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