TS13001 Datasheet | Taiwan Semiconductor

Features — High voltage. Ordering Information Part No. TS13001CT Packing Bulk Package TO-92 — High speed switching Structure — Silicon triple diffused type. — NPN silicon transistor Absolute Maximum Rating (Ta = 25 o C Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC unless otherwise noted) Symbol VCBO VCEO VEBO IC Limit 500V 400V 9 0.1 0.3 Unit Pulse Collector Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range Note: 1. Single pulse, Pw = 5m S, Duty <= 10% TO-92 PD TJ TSTG 0.6 +150 - 55 to +150 W o o Electrical Characteristics Ta = 25 o C unless otherwise noted Parameter Static Collector-Base Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage DC Current Gain Output Capacitance Storage Time Fall Time Conditions IC = 10m A, IB = 0 IC = 10m A, IE = 0 IE = 1m A, IC = 0 VCB = 500V, IE = 0 VEB = 7V, IC = 0 IC / IB = 50m A / 10m A VCE = 5V, IC = 20m A VCB = 10V, f = 0.1MHz VCE = 250V, IC = 5 Ib, Ib1=Ib2=40m A Symbol Min 500 400 9 ---10 ---- Typ -------4 --- Max ---100 0.01 0.5 40 -2.0 0.8 Unit V V V u A u A V BVCBO BVCEO BVEBO ICBO IEBO VCE(SAT) h FE Cob ts tf p F u S Note : pulse test: pulse width <=5m S, duty cycle <=10% 1-2 2003/12 rev....