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  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

TS4448RW Datasheet

350mW High Speed SMD Switching Diode

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Small Signal Product
TS4448 RW
Taiwan Semiconductor
350mW High Speed SMD Switching Diode
FEATURES
- Designed for mounting on small surface
- Extremely thin / leadless package
- High mounting capability, strong surage with stand,
high reliability
- Pb free version and RoHS compliant
- Packing code with suffix "G" means
green compound (halogen-free)
1005
MECHANICAL DATA
- Case: 1005
- Terminal: Gold plated, solderable per
MIL-STD-750, method 2026
- Polarity: Indicated by cathode band
- Weight: 6 mg (approximately)
- Marking code: S5
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Power Dissipation
Repetitive Peak Reverse Voltage
Mean Forward Current
Non-Repetitive Peak Forward
Surge Current
Pulse Width = 1 μs
Pulse Width = 8.3 ms
PD
VRRM
IO
IFSM
200
100
125
2
1
Thermal Resistance (Junction to Ambient)
Junction and Storage Temperature Range
(Note 1)
RθJA
TJ , TSTG
500
-40 to +125
PARAMETER
Reverse Breakdown Voltage
(Note 2)
Forward Voltage
Reverse Leakage Current
Junction Capacitance
Reverse Recovery Time
IF=5mA
IF=100mA
VR=20V
VR=80V
VR=0V, f=1.0MHz
(Note 3)
Note 1: Valid provided that electrodes are kept at ambient temperature
Note 2: Test condition : IR=100μA
Note 3: Test condition : IF=IR=10mA, RL=100, IRR=1mA
SYMBOL
V(BR)
VF
IR
CJ
trr
MIN
-
0.62
-
-
-
-
MAX
80
0.72
1.00
25
100
9
9
UNIT
mW
V
mA
A
oC/W
oC
UNIT
V
V
nA
pF
ns
Document Number: DS_S1501011
Version: D15


  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

TS4448RW Datasheet

350mW High Speed SMD Switching Diode

No Preview Available !

Small Signal Product
RATINGS AND CHARACTERISTICS CURVES
(TA=25°C unless otherwise noted)
1000
Fig. 1 Typical Forward Characteristics
100
10
1
0.1
0.01
0
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
Forward Voltage (V)
2
420
350
280
210
140
70
0
0
Fig. 3 Admissible Power Dissipation Curve
25 50 75 100 125 150
Ambient Temperature (oC)
TS4448 RW
Taiwan Semiconductor
Fig. 2 Reverse Current VS. Reverse Voltage
100
10
1
0.1
0.01
0
20 40 60 80 100 120 140
Reverse Voltage (V)
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0
Fig. 4 Typical Junction Capacitance
2468
Reverse Voltage (V)
10
10000
Fig. 5 Forward Resistance VS. Forward Current
1000
100
10
1
0.01
0.1 1 10
Forward Current (mA)
100
Document Number: DS_S1501011
Version: D15


Part Number TS4448RW
Description 350mW High Speed SMD Switching Diode
Maker Taiwan Semiconductor
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TS4448RW Datasheet PDF






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