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  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

TSC5804D Datasheet

High Voltage Fast-Switching NPN Power Transistor

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TSC5804D pdf
TO-251
(IPAK)
TO-252
(DPAK)
Pin Definition:
1. Base
2. Collector
3. Emitter
TSC5804D
High Voltage Fast-Switching
NPN Power Transistor
PRODUCT SUMMARY
BVCEO
BVCBO
IC
VCE(SAT)
450V
1050V
4A
0.5V @ IC=1A, IB=0.2A
Features
High Voltage Capability
High Switching Speed
Structure
Silicon Triple Diffused Type
NPN Silicon Transistor
Ordering Information
Part No.
Package
Packing
TSC5804DCH C5G TO-251
75pcs / Tube
TSC5804DCP ROG TO-252 2.5Kpcs / 13” Reel
Note: “G” denote for Halogen Free Product
Block Diagram
Absolute Maximum Rating (TA = 25oC, unless otherwise noted)
Parameter
Symbol
Collector-Base Voltage
Collector-Emitter Voltage @ VBE=0V
Emitter-Base Voltage
Collector Current
Collector Peak Current (tp <5ms)
Base Current
Base Peak Current (tp <5ms)
Power Total Dissipation @ Tc=25ºC
Maximum Operating Junction Temperature
Storage Temperature Range
Note: Single Pulse. PW = 300uS, Duty 2%
VCBO
VCES
VEBO
IC
ICM
IB
IBM
PDTOT
TJ
TSTG
Thermal Performance
Parameter
Thermal Resistance – Junction to Case
Thermal Resistance - Junction to Ambient
Symbol
RӨJC
RӨJA
Limit
1050
450
15
4
8
2
4
45
+150
-55 to +150
Limit
2.78
100
Unit
V
V
V
A
A
A
A
W
oC
oC
Unit
oC/W
oC/W
1/5 Version: A13


  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

TSC5804D Datasheet

High Voltage Fast-Switching NPN Power Transistor

No Preview Available !

TSC5804D pdf
TSC5804D
High Voltage Fast-Switching
NPN Power Transistor
Electrical Specifications (TA = 25oC unless otherwise noted)
Parameter
Conditions
Symbol
Static
Collector-Base Voltage
IC =0.5mA
Collector-Emitter Breakdown Voltage IC =5mA
Emitter-Base Breakdown Voltage
IE =1mA
Collector Cutoff Current
VCE =400V, IB=0
Collector Cutoff Current
VCB =950V, IE =0
Collector-Emitter Saturation Voltage IC=1A, IB =0.2A
Collector-Emitter Saturation Voltage IC=3.5A, IB =1A
Base-Emitter Saturation Voltage
IC=3.5A, IB =1A
DC Current Gain
VCE =5V, IC =100mA
VCE =3V, IC =800mA
Diode Forward Voltage
IC=2A
Resistive Load Switching Time (Ratings)
BVCBO
BVCEO
BVEBO
ICEO
ICBO
VCE(SAT)1
VCE(SAT)2
VBE(SAT)1
hFE1
hFE2
VF
Rise Time
Storage Time
VCC =5V, IC =0.5A,
Fall Time
Notes: Pulsed duration =380uS, duty cycle 2%
tr
tSTG
tf
Min
1050
450
15
--
--
---
---
--
50
25
--
--
4.5
--
Typ
--
--
--
10
--
--
1.5
1.1
70
30
--
--
5
--
Max
--
--
--
250
10
0.5
2.0
1.5
100
50
1.5
1
5.5
1.2
Unit
V
V
V
uA
uA
V
V
V
V
uS
uS
uS
2/5 Version: A13


Part Number TSC5804D
Description High Voltage Fast-Switching NPN Power Transistor
Maker Taiwan Semiconductor
Total Page 5 Pages
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