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TSD1858CH - Low Vcesat NPN Transistor

This page provides the datasheet information for the TSD1858CH, a member of the TSD1858 Low Vcesat NPN Transistor family.

Description

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Features

  • Low VCE(SAT) 0.15 @ IC = 1A, IB = 100mA (Typ. ) High BVCEO Ordering Information Part No. TSD1858CH C5G Package TO-251 Packing 75pcs / Tube Structure.
  • Epitaxial Planar Type NPN Silicon Transistor Note: “G” denote for Halogen Free Product Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation @ TA=25 C Power Dissipation @ TC=25 C Thermal Resistance - J.

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Datasheet Details

Part number TSD1858CH
Manufacturer Taiwan Semiconductor
File Size 352.81 KB
Description Low Vcesat NPN Transistor
Datasheet download datasheet TSD1858CH Datasheet
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Full PDF Text Transcription

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TSD1858 Low Vcesat NPN Transistor TO-251 (IPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO BVCEO IC VCE(SAT) 180V 160V 1.5A 0.3V @ IC = 1A, IB = 100mA Features ● ● Low VCE(SAT) 0.15 @ IC = 1A, IB = 100mA (Typ.) High BVCEO Ordering Information Part No.
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