TSF10H100C Datasheet - Taiwan Semiconductor

Trench Schottky Rectifier

TSF10H100C Features

* Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to W

TSF10H100C General Description

RATINGS AND CHARACTERISTICS CURVES (TA=25oC unless otherwise noted) FIG.1 FORWARD CURRENT DERATING CURVE 12 10 8 6 4 2 0 0 25 50 75 100 125 150 INSTANTANEOUS FORWARD CURRENT (A) FIG. 2 TYPICAL FORWARD CHARACTERISTICS 100 TJ=150oC AVERAGE FORWARD CURRENT (A) 10 TJ=125oC 1 TJ=100oC 0.1 TJ=25oC WI.

TSF10H100C Datasheet (238.30 KB)

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TSF10H100C

Manufacturer:

Taiwan Semiconductor

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238.30 KB

Description:

Trench schottky rectifier.

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TSF10H100C Trench Schottky Rectifier Taiwan Semiconductor

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TSF10H100C Features

TSF10H100C General Description

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