TSF10H100C Datasheet PDF (Trench Schottky Rectifier) | Download Taiwan Semiconductor TSF10H100C

TSF10H100C - Trench Schottky Rectifier

Description

FIG.

Features

Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition ITO-220AB.

Datasheet Details

Part number	TSF10H100C
Manufacturer	Taiwan Semiconductor
File Size	238.30 KB
Description	Trench Schottky Rectifier
Datasheet	TSF10H100C Datasheet
Additional preview pages of the TSF10H100C datasheet.

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Full PDF Text Transcription

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creat by ART TSF10H100C Taiwan Semiconductor FEATURES Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition ITO-220AB MECHANICAL DATA Case: ITO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/N with suffix "G" on packing code - halogen-free, RoHS compliant Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test Polarity: As marked Mounting torque: 5 in-lbs. max. Weight: 1.

Published: Jul 10, 2014 |