TSF2080C Datasheet PDF (Dual High-Voltage Trench MOS Barrier Schottky Rectifier)

TSF2080C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Description

FIG.

Features

- Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition ITO-220AB.

Datasheet Details

Part number	TSF2080C
Manufacturer	Taiwan Semiconductor
File Size	186.07 KB
Description	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	TSF2080C Datasheet
Additional preview pages of the TSF2080C datasheet.

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Full PDF Text Transcription

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creat by ART TSF2080C Taiwan Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition ITO-220AB MECHANICAL DATA Case: ITO-220AB Molding compound meets UL 94 V-0 flammability rating Terminal: Matte tin plated leads, solderable per JESD 22-B102 Polarity: As marked Mounting torque: 5 in-lbs. max. Weight: 1.

Published: Jul 10, 2014 |