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TSF30H120C Datasheet, Taiwan Semiconductor

TSF30H120C rectifier equivalent, trench schottky rectifier.

TSF30H120C Avg. rating / M : 1.0 rating-11

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TSF30H120C Datasheet

Features and benefits

- Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge ca.

Description

RATINGS AND CHARACTERISTICS CURVES (TA=25oC unless otherwise noted) FIG.1 FORWARD CURRENT DERATING CURVE 40 35 AVERAGE FORWARD CURRENT (A) INSTANTANEOUS FORWARD CURRENT (A) FIG. 2 TYPICAL FORWARD CHARACTERISTICS 100 30 25 20 15 10 5 0 0 25 50 75 1.

Image gallery

TSF30H120C Page 1 TSF30H120C Page 2 TSF30H120C Page 3

TAGS

TSF30H120C
Trench
Schottky
Rectifier
Taiwan Semiconductor

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