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TSM19N20 Datasheet - Taiwan Semiconductor

200V N-Channel Power MOSFET

TSM19N20 Features

* Advanced Trench Technology Low RDS(ON) 92mΩ (Max.) Low gate charge typical @ 55nC (Typ.) Low Crss typical @ 73pF (Typ.) Block Diagram Ordering Information Part No. TSM19N20CP ROG Package TO-252 Packing 2.5Kpcs / 13” Reel Note: “G” denote for Halogen Free Product N-Channe

TSM19N20 General Description

only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC pr.

TSM19N20 Datasheet (88.62 KB)

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Datasheet Details

Part number:

TSM19N20

Manufacturer:

Taiwan Semiconductor

File Size:

88.62 KB

Description:

200v n-channel power mosfet.
TSM19N20 200V N-Channel Power MOSFET TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) 200 RDS(on)(mΩ) 92 @ VGS =10V .

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TSM19N20 200V N-Channel Power MOSFET Taiwan Semiconductor

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