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TSM19N20CP - 200V N-Channel Power MOSFET

This page provides the datasheet information for the TSM19N20CP, a member of the TSM19N20 200V N-Channel Power MOSFET family.

Description

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Features

  • Advanced Trench Technology Low RDS(ON) 92mΩ (Max. ) Low gate charge typical @ 55nC (Typ. ) Low Crss typical @ 73pF (Typ. ) Block Diagram Ordering Information Part No. TSM19N20CP ROG Package TO-252 Packing 2.5Kpcs / 13” Reel Note: “G” denote for Halogen Free Product N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Drain Current Pulsed (Note 1) Avalanche Curre.

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Datasheet preview – TSM19N20CP

Datasheet Details

Part number TSM19N20CP
Manufacturer Taiwan Semiconductor
File Size 88.62 KB
Description 200V N-Channel Power MOSFET
Datasheet download datasheet TSM19N20CP Datasheet
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Full PDF Text Transcription

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TSM19N20 200V N-Channel Power MOSFET TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) 200 RDS(on)(mΩ) 92 @ VGS =10V ID (A) 18 Features ● ● ● ● Advanced Trench Technology Low RDS(ON) 92mΩ (Max.) Low gate charge typical @ 55nC (Typ.) Low Crss typical @ 73pF (Typ.) Block Diagram Ordering Information Part No. TSM19N20CP ROG Package TO-252 Packing 2.
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