TSM19N20CP Datasheet - Taiwan Semiconductor

200V N-Channel Power MOSFET

TSM19N20CP Features

* Advanced Trench Technology Low RDS(ON) 92mΩ (Max.) Low gate charge typical @ 55nC (Typ.) Low Crss typical @ 73pF (Typ.) Block Diagram Ordering Information Part No. TSM19N20CP ROG Package TO-252 Packing 2.5Kpcs / 13” Reel Note: “G” denote for Halogen Free Product N-Channe

TSM19N20CP General Description

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TSM19N20CP Datasheet (88.62 KB)

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TSM19N20CP

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Taiwan Semiconductor

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200v n-channel power mosfet.
TSM19N20 200V N-Channel Power MOSFET TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) 200 RDS(on)(mΩ) 92 @ VGS =10V .

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TSM19N20CP 200V N-Channel Power MOSFET Taiwan Semiconductor

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TSM19N20CP General Description

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