Download TSM200N03D Datasheet PDF
Taiwan Semiconductor
TSM200N03D
FEATURES - Fast switching - 100% avalanche tested - Pb-free plating - Ro HS pliant - Halogen-free package APPLICATION - Power Supply - Motor COntrol Dual N-Channel MOSFET 30V, 20A, 20mΩ KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT RDS(on) (max) VGS = -10V VGS = -4.5V Qg 30 20 30 4.1 V mΩ n C PDFN33 Dual Notes: Moisture sensitivity level: level 3. Per J-STD-020 Dual N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2) TC = 25°C TC = 100°C Total Power Dissipation @ TC = 25°C Single Pulsed Avalanche Energy (Note 3) Single Pulsed Avalanche Current (Note 3) Operating Junction and Storage Temperature Range VDS VGS IDM PDTOT EAS IAS TJ, TSTG 30 ±20 20 13 80 20 14 17 - 55 to +150 UNIT V...