TSM2307CX - 30V P-Channel MOSFET

Taiwan Semiconductor

General Description

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No license, express or implied, to any intellectual property rights is granted by this document.

Key Features

Advance Trench Process Technology.
High Density Cell Design for Ultra Low On-resistance.

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Datasheet Details

Part number	TSM2307CX
Manufacturer	Taiwan Semiconductor
File Size	596.39 KB
Description	30V P-Channel MOSFET
Datasheet	TSM2307CX Datasheet

Full PDF Text Transcription for TSM2307CX (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for TSM2307CX. For precise diagrams, and layout, please refer to the original PDF.

TSM2307CX 30V P-Channel MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain Key Parameter Performance Parameter Value VDS RDS(on) (max) VGS = -10V VGS = -4.5V -30 95...

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rmance Parameter Value VDS RDS(on) (max) VGS = -10V VGS = -4.5V -30 95 140 Qg 10 Unit V mΩ nC Features ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance Application ● Load Switch ● PA Switch Ordering Information Part No.

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Brand Logo	Part Number	Description	Manufacturer
	TSM2307	30V P-Channel MOSFET	Taiwan Semiconductor Company

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