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TSM35N10CP - 100V N-Channel Power MOSFET

This page provides the datasheet information for the TSM35N10CP, a member of the TSM35N10 100V N-Channel Power MOSFET family.

Description

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Features

  • Advanced Trench Technology Low RDS(ON) 37mΩ (Max. ) Low gate charge typical @ 34nC (Typ. ) Low Crss typical @ 45pF (Typ. ) Block Diagram Ordering Information Part No. TSM35N10CP ROG Package TO-252 Packing 2.5Kpcs / 13” Reel Note: “G” denote for Halogen Free Product N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage TC=25° C TC=70° C TA=25° C TA=70° C Symbol VDS VGS Limit 100 ±20 32 26 5 4 70.

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Datasheet preview – TSM35N10CP

Datasheet Details

Part number TSM35N10CP
Manufacturer Taiwan Semiconductor
File Size 572.70 KB
Description 100V N-Channel Power MOSFET
Datasheet download datasheet TSM35N10CP Datasheet
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Full PDF Text Transcription

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TSM35N10 100V N-Channel Power MOSFET TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) 100 RDS(on)(mΩ) 37 @ VGS =10V ID (A) 32 Features ● ● ● ● Advanced Trench Technology Low RDS(ON) 37mΩ (Max.) Low gate charge typical @ 34nC (Typ.) Low Crss typical @ 45pF (Typ.) Block Diagram Ordering Information Part No. TSM35N10CP ROG Package TO-252 Packing 2.5Kpcs / 13” Reel Note: “G” denote for Halogen Free Product N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage TC=25° C TC=70° C TA=25° C TA=70° C Symbol VDS VGS Limit 100 ±20 32 26 5 4 70 35 61 83.3 53.3 2 1.3 -55 to +150 -55 to +150 Unit V V Continuous Drain Current ID A Drain Current-Pulsed Note 1 Avalanche Current, L=0.
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