Datasheet4U Logo Datasheet4U.com

TSM3N90 - 900V N-Channel Power MOSFET

Description

TO-251 (IPAK) TO-252 (DPAK) The TSM3N90 N-Channel Power MOSFET is produced by new advance planar process.

Features

  • Low RDS(ON) 4.3Ω (Typ. ) Low gate charge typical @ 17nC (Typ. ) Low Crss typical @ 8.7pF (Typ. ) Block Diagram Ordering Information Part No. TSM3N90CH C5G TSM3N90CP ROG TSM3N90CZ C0 Package TO-251 TO-252 TO-220 Packing 75pcs / Tube 2.5Kpcs / 13” Reel 50pcs / Tube 50pcs / Tube N-Channel MOSFET TSM3N90CI C0G ITO-220 Note: “G” denotes for Halogen Free Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain C.

📥 Download Datasheet

Datasheet preview – TSM3N90

Datasheet Details

Part number TSM3N90
Manufacturer Taiwan Semiconductor
File Size 555.79 KB
Description 900V N-Channel Power MOSFET
Datasheet download datasheet TSM3N90 Datasheet
Additional preview pages of the TSM3N90 datasheet.

📁 Similar Datasheet

  • TSM3400 - 30V N-Channel MOSFET (Taiwan Semiconductor Company)
  • TSM3401 - P-Channel Power MOSFET (Taiwan Semiconductor Company)
  • TSM3404 - 30V N-Channel MOSFET (Taiwan Semiconductor Company)
  • TSM3424 - 30V N-Channel MOSFET (Taiwan Semiconductor Company)
  • TSM3433 - 20V P-Channel MOSFET (Taiwan Semiconductor Company)
  • TSM3442 - 20V N-CHANNEL MOSFET (Taiwan Semiconductor Company)
  • TSM3443 - 20V P-CHANNEL MOSFET (Taiwan Semiconductor Company)
  • TSM3446 - 20V N-Channel MOSFET (Taiwan Semiconductor Company)
  • TSM3457 - 30V P-Channel MOSFET (Taiwan Semiconductor Company)
  • TSM3460 - 20V N-Channel MOSFET (Taiwan Semiconductor Company)
Other Datasheets by Taiwan Semiconductor

Full PDF Text Transcription

Click to expand full text
TSM3N90 900V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) 900 RDS(on)(Ω) 5.1 @ VGS =10V ID (A) 1.25 General Description TO-251 (IPAK) TO-252 (DPAK) The TSM3N90 N-Channel Power MOSFET is produced by new advance planar process. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Features ● ● ● Low RDS(ON) 4.3Ω (Typ.) Low gate charge typical @ 17nC (Typ.) Low Crss typical @ 8.7pF (Typ.) Block Diagram Ordering Information Part No. TSM3N90CH C5G TSM3N90CP ROG TSM3N90CZ C0 Package TO-251 TO-252 TO-220 Packing 75pcs / Tube 2.
Published: |