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TSM4539D - Complementary Enhancement MOSFET

General Description

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Key Features

  • Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram.

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TSM4539D Complementary Enhancement MOSFET SOP-8 Pin Definition: 1. Source 1 8. Drain 1 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 4. Gate 2 5. Drain 2 MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) N-Channel P-Channel 30 28 @ VGS = 10V 42 @ VGS = 4.5V 65 @ VGS = -10V 90 @ VGS = -4.5V ID (A) 6.5 5.0 -4.2 -3.5 -30 Features ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Application ● ● Load Switch PA Switch Ordering Information Part No. Package Packing TSM4539DCS RLG SOP-8 2.