*
*
* Low RDS(ON) 1.4Ω (Max.) Low gate charge typical @ 41nC (Typ.) Improve dv/dt capability Block Diagram Ordering Information Part No. TSM8N80CZ C0 TSM8N8.

Customers using or selling these products for use in such applications do so at their own risk and agree to fully indem.

The TSM8N80 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

TSM802

TSM8405P

TSM850N06CX

TSM8568CS

TSM8588CS

TSM85N10

TSM-102-01-S-SV

TSM-105-01-S-DV

TSM-105-01-xxx

TSM-108-xx

TSM-1250

TSM-3E20

TSM006

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