TSM900N06CH - N-Channel Power MOSFET

Taiwan Semiconductor

Key Features

100% UIS and Rg tested.
Logic-level gate drive.
Fast switching.
RoHS Compliant.
Halogen-Free according to IEC 61249-2-21.

TSM900N06CH n-channel power mosfet by Taiwan Semiconductor - Datasheet Preview

Datasheet Details

Part number	TSM900N06CH
Manufacturer	Taiwan Semiconductor
File Size	568.10 KB
Description	N-Channel Power MOSFET
Datasheet	TSM900N06CH Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
TSM9117	1.6V Nanopower Comparators	Touchstone Semiconductor
TSM9117	1.6V Nanopower Comparators with/without Internal References	Silicon Laboratories
TSM9118	1.6V Nanopower Comparators	Touchstone Semiconductor
TSM9118	1.6V Nanopower Comparators with/without Internal References	Silicon Laboratories
TSM9119	1.6V Nanopower Comparators	Touchstone Semiconductor

Other Datasheets by Taiwan Semiconductor

Part Number	Description
TSM900N06CP	N-Channel Power MOSFET
TSM900N06CW	N-Channel Power MOSFET
TSM900N06	60V N-Channel Power MOSFET
TSM900N10	N-Channel Power MOSFET
TSM950N10	N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

TSM900N06CH Taiwan Semiconductor N-Channel Power MOSFET 60V, 11A, 90mΩ FEATURES ● 100% UIS and Rg tested ● Logic-level gate drive ● Fast switching ● RoHS Compliant ● Halogen-Free according to IEC 61249-2-21 APPLICATIONS ● DC-DC Converters ● Solenoid and Motor Drivers PRODUCT SUMMARY PARAMETER VALUE VDS 60 VGS = 10V 90 RDS(on) (max) VGS = 4.5V 100 Qg VGS = 10V 9.