TSM950N10CW - N-Channel Power MOSFET

Taiwan Semiconductor

Key Features

Fast switching.
Pb-free plating.
RoHS compliant.
Halogen-free mold compound.

TSM950N10CW n-channel power mosfet by Taiwan Semiconductor - Datasheet Preview

Datasheet Details

Part number	TSM950N10CW
Manufacturer	Taiwan Semiconductor
File Size	256.64 KB
Description	N-Channel Power MOSFET
Datasheet	TSM950N10CW Datasheet

Full PDF Text Transcription for TSM950N10CW (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for TSM950N10CW. For precise diagrams, and layout, please refer to the original PDF.

TSM950N10CW Taiwan Semiconductor N-Channel Power MOSFET 100V, 6.5A, 95mΩ FEATURES ● Fast switching ● Pb-free plating ● RoHS compliant ● Halogen-free mold compound APPLICA...

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Pb-free plating ● RoHS compliant ● Halogen-free mold compound APPLICATION ● Networking ● Load Switch ● Lighting KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS RDS(on) (max) VGS = 10V VGS = 4.5V Qg 100 95 110 9.3 V mΩ nC SOT-223 Note: MSL 3 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 100 Gate-Source Voltage Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2) TC = 25°C TC = 100°C VGS ID IDM ±20 6.5 4.

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