Download TSP10U60S Datasheet PDF
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TSP10U60S Description

2 TYPICAL FORWARD CHARACTERISTICS 100 INSTANTANEOUS FORWARD CURRENT (A) AVERAGE FORWARD CURRENT (A) 15 10 5 WITH HEATSINK 30mm x 30mm 4 oz. 4 TYPICAL JUNCTION CAPACITANCE 10000 1000 f=1.0MHz Vsig=50mVp-p 100 0.1 1 10 REVERSE VOLTAGE (V) 100 Document Number: D14 PACKAGE OUTLINE DIMENSIONS TO-277A (SMPC) TSP10U60S Taiwan Semiconductor DIM.

TSP10U60S Key Features

  • Patented Trench Schottky technology
  • Excellent high temperature stability
  • Low forward voltage
  • Lower power loss/ high efficiency
  • High forward surge capability
  • Ideal for automated placement
  • Moisture sensitivity level: level 1, per J-STD-020
  • pliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
  • Halogen-free according to IEC 61249-2-21 definition
  • 0.40 0.47