TSSA3U45 - Trench MOS Barrier Schottky Rectifier

Taiwan Semiconductor

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Datasheet Details

Part number	TSSA3U45
Manufacturer	Taiwan Semiconductor
File Size	163.93 KB
Description	Trench MOS Barrier Schottky Rectifier
Datasheet	TSSA3U45-TaiwanSemiconductor.pdf

TSSA3U45 Product details

Description

Green compound RATINGS AND CHATACTERISTICS CURVES (TA=25oC unless otherwise noted) FIG.1 FORWARD CURRENT DERATING CURVE 5 INSTANTANEOUS FORWARD CURRENT (A) FIG.2 TYPICAL FORWARD CHARACTERISTICS 100 AVERAGE FORWARD CURRENT (A) 4 10 Tj=125oC 1 Tj=150oC 3 2 Tj=100oC 0.1 Tj=25oC 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 FORWARD VOLTAGE (V) 1 TL Measured at the Cathode Band terminal 0 0 25 50 75 100 (oC) 125 150 JUNCTION TEMPERATURE FIG.3 TYPICAL REVERSE CHARACTERISTICS 1000 INSTANTANEOUS REVER

Features

- Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Moisture sensitivity level: level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition.

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Published: Aug 5, 2014 |