TSSD10L100SW - TSSD10L200SW
Taiwan Semiconductor
10A, 100V - 200V Trench Schottky Rectifier
FEATURES
● Patented Trench Schottky technology
● Low power loss / high efficiency
● Ideal for automated placement
● Guard ring for over-voltage protection
● High forward surge capability
● Compliant to RoHS directive 2011/65/EU and
In accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● Switching mode power supply (SMPS)
● Adapters
● Lighting application
● On-board DC/DC converter
KEY PARAMETERS
PARAMETER VALUE UNIT
IF(AV)
VRRM
IFSM
TJ MAX
Package
10
A
100 - 200 V
120
A
150
°C
TO-252 (D-PAK)
Configuration
Single die
MECHANICAL DATA
● Case: TO-252 (D-PAK)
● Molding compound meets UL 94V-0 flammability rating
● Packing code with suffix "G" means green compound
(halogen-free)
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 1A whisker test
● Polarity: As marked
● Weight: 0.4 g (approximately)
TO-252 (D-PAK)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
TSSD10L TSSD10L
SYMBOL
100SW
150SW
Marking code on the device
10L100SW 10L150SW
Repetitive peak reverse voltage
VRRM
100
150
Forward current
IF(AV)
10
Surge peak forward current, 8.3 ms single half
sine-wave superimposed on rated load per diode
IFSM
200
Critical rate of rise of off-state voltage
dV/dt
10,000
Junction temperature
TJ
-55 to +150
Storage temperature
TSTG
-55 to +150
TSSD10L
200SW
10L200SW
200
UNIT
V
A
A
V/µ s
°C
°C
1
Version:B1704
