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  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

TSSD10L100SW Datasheet

Trench Schottky Rectifier

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TSSD10L100SW - TSSD10L200SW
Taiwan Semiconductor
10A, 100V - 200V Trench Schottky Rectifier
FEATURES
Patented Trench Schottky technology
Low power loss / high efficiency
Ideal for automated placement
Guard ring for over-voltage protection
High forward surge capability
Compliant to RoHS directive 2011/65/EU and
In accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21
APPLICATIONS
Switching mode power supply (SMPS)
Adapters
Lighting application
On-board DC/DC converter
KEY PARAMETERS
PARAMETER VALUE UNIT
IF(AV)
VRRM
IFSM
TJ MAX
Package
10
A
100 - 200 V
120
A
150
°C
TO-252 (D-PAK)
Configuration
Single die
MECHANICAL DATA
Case: TO-252 (D-PAK)
Molding compound meets UL 94V-0 flammability rating
Packing code with suffix "G" means green compound
(halogen-free)
Terminal: Matte tin plated leads, solderable per J-STD-002
Meet JESD 201 class 1A whisker test
Polarity: As marked
Weight: 0.4 g (approximately)
TO-252 (D-PAK)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
TSSD10L TSSD10L
SYMBOL
100SW
150SW
Marking code on the device
10L100SW 10L150SW
Repetitive peak reverse voltage
VRRM
100
150
Forward current
IF(AV)
10
Surge peak forward current, 8.3 ms single half
sine-wave superimposed on rated load per diode
IFSM
200
Critical rate of rise of off-state voltage
dV/dt
10,000
Junction temperature
TJ
-55 to +150
Storage temperature
TSTG
-55 to +150
TSSD10L
200SW
10L200SW
200
UNIT
V
A
A
V/µ s
°C
°C
1
Version:B1704


  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

TSSD10L100SW Datasheet

Trench Schottky Rectifier

No Preview Available !

TSSD10L100SW - TSSD10L200SW
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
SYMBOL
LIMIT
Junction-to-lead thermal resistance
RӨJL
13
Junction-to-ambient thermal resistance
RӨJA
59
Junction-to-case thermal resistance
RӨJC
15
Thermal Performance Note: Units mounted on recommended PCB (16mm x 16mm Cu pad test board)
UNIT
°C/W
°C/W
°C/W
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
CONDITIONS SYMBOL
IF = 5A, TJ = 25°C
TSSD10L100SW
IF = 10A, TJ = 25°C
IF = 5A, TJ = 125°C
Forward voltage per diode
(1)
IF = 10A, TJ = 125°C
VF
IF = 5A, TJ = 25°C
TSSD10L150SW
TSSD10L200SW
IF = 10A, TJ = 25°C
IF = 5A, TJ = 125°C
IF = 10A, TJ = 125°C
TJ = 25°C
TSSD10L100SW
Reverse current @ rated
TJ = 125°C
VR per diode (2)
TSSD10L150SW TJ = 25°C
IR
TSSD10L200SW TJ = 125°C
TSSD10L100SW
Junction capacitance
TSSD10L150SW 1 MHz, VR=4.0V
CJ
TSSD10L200SW
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
TYP
0.56
0.70
0.51
0.62
0.81
0.91
0.63
0.72
-
-
-
-
540
325
MAX
-
0.80
-
0.71
-
1.05
-
0.83
50
20
20
1
-
UNIT
V
V
V
V
V
V
V
V
µA
mA
µA
mA
pF
-
pF
ORDERING INFORMATION
PART NO.
PACKING
CODE
PACKING CODE
SUFFIX
PACKAGE
TSSD10LxxSW
RO
(Note 1, 2)
G
TO-252 (D-PAK)
Notes:
1. "xx" defines voltage from 100V (TSSD10L100SW) to 200V (TSSD10L200SW)
2. Whole series with green compound (halogen-free)
PACKING
2.5KPCS / 13"Reel
EXAMPLE
EXAMPLE P/N
PART NO.
TSSD10L100SW ROG TSSD10L100SW
PACKING CODE
RO
PACKING CODE
SUFFIX
G
DESCRIPTION
Green compound
2
Version:B1704



Part Number TSSD10L100SW
Description Trench Schottky Rectifier
Maker Taiwan Semiconductor
Total Page 3 Pages
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TSSD10L100SW Datasheet PDF





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