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  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

TSSD20L200SW Datasheet

Trench Schottky Rectifier

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TSSD20L100SW - TSSD20L200SW
Taiwan Semiconductor
20A, 100V - 200V Trench Schottky Rectifier
FEATURES
Patented Trench Schottky technology
Low power loss/ high efficiency
Ideal for automated placement
Guard ring for over-voltage protection
High forward surge capability
Compliant to RoHS directive 2011/65/EU and
In accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21
APPLICATIONS
Switching mode power supply (SMPS)
Adapters
Lighting application
On-board DC/DC converter
KEY PARAMETERS
PARAMETER VALUE UNIT
IF(AV)
VRRM
IFSM
TJ MAX
Package
20
A
100 - 200 V
200
A
150
°C
TO-252 (D-PAK)
Configuration
Single Die
MECHANICAL DATA
Case: TO-252 (D-PAK)
Molding compound: UL flammability classification
rating 94V-0
Packing code with suffix "G" means green compound
(halogen-free)
Terminal: Matte tin plated leads, solderable per J-STD-002
Meet JESD 201 class 1A whisker test
Polarity: As marked
Weight: 0.4 g (approximately)
TO-252 (D-PAK)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
TSSD20L TSSD20L TSSD20L
SYMBOL
100SW 150SW 200SW
Marking code on the device
20L100SW 20L150SW 20L200SW
Repetitive peak reverse voltage
Forward current
Surge peak forward current, 8.3 ms single half
sine-wave superimposed on rated load per diode
Critical rate of rise of off-state voltage
VRRM
IF(AV)
IFSM
dV/dt
100
150
200
20
200
10,000
Junction temperature
Storage temperature
TJ
TSTG
-55 to +150
-55 to +150
UNIT
V
A
A
V/µ s
°C
°C
1
Version:B1702


  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

TSSD20L200SW Datasheet

Trench Schottky Rectifier

No Preview Available !

TSSD20L100SW - TSSD20L200SW
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
SYMBOL
LIMIT
Junction-to-lead thermal resistance
RӨJL
17
Junction-to-ambient thermal resistance
RӨJA
58
Junction-to-case thermal resistance
RӨJC
18
Thermal Performance Note: Units mounted on recommended PCB (16mm x 16mm Cu pad test board)
UNIT
°C/W
°C/W
°C/W
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
CONDITIONS SYMBOL
IF = 10A, TJ = 25°C
TSSD20L100SW
IF = 20A, TJ = 25°C
IF = 10A, TJ = 125°C
IF = 20A, TJ = 125°C
IF = 10A, TJ = 25°C
Forward voltage per diode
IF = 20A, TJ = 25°C
(1)
TSSD20L150SW
VF
IF = 10A, TJ = 125°C
IF = 20A, TJ = 125°C
IF = 10A, TJ = 25°C
TSSD20L200SW
IF = 20A, TJ = 25°C
IF = 10A, TJ = 125°C
IF = 20A, TJ = 125°C
TSSD20L100SW
TJ = 25°C
TJ = 125°C
Reverse current @ rated
TJ = 25°C
VR per diode (2)
TSSD20L150SW
TJ = 125°C
IR
TSSD20L200SW
TJ = 25°C
TJ = 125°C
TSSD20L100SW
Junction capacitance
TSSD20L150SW 1 MHz, VR=4.0V
CJ
TSSD20L200SW
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
TYP
0.60
0.75
0.55
0.68
0.80
0.89
0.67
0.78
0.81
0.90
0.67
0.78
-
-
-
-
-
-
1000
920
880
MAX
-
0.87
-
0.79
-
1.05
-
0.90
-
1.1
-
0.91
50
20
20
1
20
1
-
-
-
UNIT
V
V
V
V
V
V
V
V
V
V
V
V
µA
mA
µA
mA
µA
mA
pF
pF
pF
2
Version:B1702



Part Number TSSD20L200SW
Description Trench Schottky Rectifier
Maker Taiwan Semiconductor
Total Page 3 Pages
PDF Download

TSSD20L200SW Datasheet PDF





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