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TST20U100C Description

1 FORWARD CURRENT DERATING CURVE 25 FIG. DS_D1411062 CAPACITANCE (pF) FIG. B14 PACKAGE OUTLINE DIMENSIONS TO-220AB TST20U100C Taiwan Semiconductor DIM.

TST20U100C Key Features

  • Patented Trench Schottky technology
  • Excellent high temperature stability
  • Low forward voltage
  • Low power loss/ high efficiency
  • High forward surge capability
  • pliant to RoHS directive 2011/65/EU and
  • Halogen-free according to IEC 61249-2-21 definition