UG2004PT - 200V High Power Density Ultra Fast Rectifier
Taiwan Semiconductor
General Description
FIG.
Key Features
- Dual rectifier construction, positive center-tap - Ultrafast recovery time - Low reverse recovery current - Low forward voltage - Reduces switching losses - Reduces conduction losses - Low thermal resistance ideal solution for high operation temperature - Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
12 3 TO-247AD (TO-3P).
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UG2004PT Taiwan Semiconductor CREAT BY ART 20A, 200V High Power Density Ultra Fast Rectifier FEATURES - Dual rectifier construction, positive center-tap - Ultrafast recov...
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S - Dual rectifier construction, positive center-tap - Ultrafast recovery time - Low reverse recovery current - Low forward voltage - Reduces switching losses - Reduces conduction losses - Low thermal resistance ideal solution for high operation temperature - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 12 3 TO-247AD (TO-3P) MECHANICAL DATA Case: TO-247AD (TO-3P) Molding compound, UL flammability classification rating 94V-0 Part no.