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  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

UGF12JD Datasheet

600V Isolated Ultrafast Rectifier

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UGF12JD
Taiwan Semiconductor
CREAT BY ART
12A, 600V Isolated Ultrafast Rectifier
FEATURES
- Especially suited as boost diode
on continuous mode power factor correctors
- Ideal Solution for hard switching condition
- High capability for high di/dt operation.
Downsizing of mosfet and heatsink.
- High surge current capability
- High operation temperature to TJ 175°C
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
- AEC-Q101 qualified (Green compound not involved)
1
2
ITO-220AC
DESCRIPTION
Especially suited as free wheeling or boost diode in continuous mode
power factor correctors and other power switching applications.
The low stored charge and ultrafast soft recovery minimizes ringing and
electrical noise in power switching circuits. The family drastically cuts losses
in the associated MOSFET when run at high dIF/dt.
MECHANICAL DATA
Case: ITO-220AC
Molding compound, UL flammability classification rating 94V-0
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity: As marked
Mounting torque: 0.56 Nm max.
Weight: 1.7 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
PARAMETER
SYMBOL
UGF12JD
Maximum repetitive peak reverse voltage
VRRM
600
Maximum RMS voltage
VRMS
420
Maximum DC blocking voltage
VDC 600
Maximum average forward rectified current
IF(AV)
12
Peak forward surge current, 8.3 ms single half
sine-wave superimposed on rated load
IFSM
100
Maximum instantaneous forward voltage (Note 1)
IF=12A
Maximum reverse current @ rated VR
TJ=25°C
TJ=125°C
Reverse recovery time
IF=0.5A, IR=1A, IRR=0.25A, TJ=25°C
IF=1A, dIF/dt=-50A/μs, VR=30V, TJ=25°C
Reverse recovery charges
IF=12A, dIF/dt=-200A/µs, VR=400V, TJ=125°C
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse Test with PW=300μs, 1% Duty Cycle
VF
IR
trr
Qrr
IRM
RθJC
TJ
TSTG
TYP MAX
3.1 -
0.5
100
TYP MAX
13 25
- 45
TYP MAX
90 -
3.8 4.6
2.4
- 55 to +175
- 55 to +175
UNIT
V
V
V
A
A
V
μA
ns
nC
A
°C/W
°C
°C
Document Number: DS_D0000081
Version: A15


  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

UGF12JD Datasheet

600V Isolated Ultrafast Rectifier

No Preview Available !

CREAT BY ART
ORDERING INFORMATION
PART NO.
PART NO.
SUFFIX
PACKING CODE
UGF12JD
H
C0
PACKING CODE
SUFFIX
G
PACKAGE
ITO-220AC
UGF12JD
Taiwan Semiconductor
PACKING
50 / Tube
EXAMPLE
PREFERRED P/N PART NO.
UGF12JDHC0
UGF12JD
PART NO.
SUFFIX
H
PACKING CODE
C0
RATINGS AND CHARACTERISTICS CURVES
(TA=25°C unless otherwise noted)
PACKING CODE
SUFFIX
DESCRIPTION
AEC-Q101 qualified
14
12
10
8
6
4
2
0
0
FIG.1 FORWARD CURRENT DERATING CURVE
RESISTIVE OR
INDUCTIVE LOAD
WITH HEATSINK
25 50 75 100 125 150 175
CASE TEMPERATURE (°C)
FIG. 2 TYPICAL REVERSE CHARACTERISTICS
100
TJ=125°C
10
1
0.1 TJ=25°C
0.01
10
20 30 40 50 60 70 80 90 100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 3 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
100
80 8.3ms Single Half Sine Wave
60
40
20
0
1
10 100
NUMBER OF CYCLES AT 60 Hz
FIG. 4 TYPICAL FORWARD CHARACTERISTICS
100
10 TJ=125°C
1
TJ=25°C
0.1
0 0.5 1 1.5 2 2.5 3 3.5 4
FORWARD VOLTAGE (V)
Document Number: DS_D0000081
Version: A15


Part Number UGF12JD
Description 600V Isolated Ultrafast Rectifier
Maker Taiwan Semiconductor
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UGF12JD Datasheet PDF






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