• Part: UGF12JD
  • Description: 600V Isolated Ultrafast Rectifier
  • Manufacturer: Taiwan Semiconductor
  • Size: 207.15 KB
Download UGF12JD Datasheet PDF
Taiwan Semiconductor
UGF12JD
UGF12JD is 600V Isolated Ultrafast Rectifier manufactured by Taiwan Semiconductor.
FEATURES - Especially suited as boost diode on continuous mode power factor correctors - Ideal Solution for hard switching condition - High capability for high di/dt operation. Downsizing of mosfet and heatsink. - High surge current capability - High operation temperature to TJ 175°C - pliant to Ro HS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition - AEC-Q101 qualified (Green pound not involved) 1 2 ITO-220AC DESCRIPTION Especially suited as free wheeling or boost diode in continuous mode power factor correctors and other power switching applications. The low stored charge and ultrafast soft recovery minimizes ringing and electrical noise in power switching circuits. The family drastically cuts losses in the associated MOSFET when run at high d IF/dt. MECHANICAL DATA Case: ITO-220AC Molding pound, UL flammability classification rating 94V-0 Part no. with suffix "H" means AEC-Q101 qualified Packing code with suffix "G" means green pound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test Polarity: As marked Mounting torque: 0.56 Nm max. Weight: 1.7 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) PARAMETER SYMBOL Maximum repetitive peak reverse voltage VRRM Maximum RMS voltage VRMS Maximum DC blocking voltage VDC 600 Maximum average forward rectified current IF(AV) Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM Maximum instantaneous forward voltage (Note 1) IF=12A Maximum reverse current @ rated VR TJ=25°C TJ=125°C Reverse recovery time IF=0.5A, IR=1A, IRR=0.25A, TJ=25°C IF=1A, d IF/dt=-50A/μs, VR=30V, TJ=25°C Reverse recovery charges IF=12A, d IF/dt=-200A/µs, VR=400V,...