UGF8JD Datasheet | Taiwan Semiconductor

FEATURES - Especially suited as boost diode on continuous mode power factor correctors - Ideal Solution for hard switching condition - High capability for high di/dt operation. Downsizing of mosfet and heatsink - High surge current capability - AEC-Q101 qualified (Green pound not involved) - pliant to Ro HS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition ITO-220AC DESCRIPTION Especially suited as free wheeling or boost diode in continuous mode power factor correctors and other power switching applications. The low stored charge and ultrafast soft recovery minimizes ringing and electrical noise in power switching circuits. The family drastically cuts losses in the associated MOSFET when run at high d IF/dt. MECHANICAL DATA Case: ITO-220AC Molding pound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - halogen-free Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test Polarity: As marked Mounting torque: 5 in-lbs maximum Weight: 1.7g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER SYMBOL Maximum repetitive peak reverse voltage Maximum average forward rectified current Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load Maximum instantaneous forward voltage (Note 1) IF= 8 A Maximum reverse current @ Rated VR TJ=25 ℃ TJ=125 ℃ Reverse recovery time IF=0.5A, IRR=0.25A, IR=1A, TJ=25℃ IF=1A, d IF/dt=-50A/us, VR=30V, TJ=25℃ Reverse recovery charges IF=1A, d IF/dt=-200A/us, VR=400V, TJ=125℃ IF=1A, d IF/dt=-200A/us, VR=400V, TJ=125℃ Typical thermal resistance Operating junction temperature range Storage temperature range Note 1: Pulse test with PW=300 μs, 1% duty cycle VRRM IF(AV) IFSM Trr Qrr IRM RθJC TJ TSTG 600 8.0 TYP 13 TYP 90 5 2.3 0.5 100 - 55 to +150 - 55 to +150 MAX 30 -...