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  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

FRA803G Datasheet

(FRA801G - FRA807G) Glass Passivated Fast Recovery Rectifiers

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FRA803G pdf
FRA801G THRU FRA807G
8.0www.DataSheet4U.com AMPS. Glass Passivated Fast Recovery Rectifiers
Voltage Range
50 to 1000 Volts
Current
8.0 Amperes
Features
TO-220A
Low forward voltage drop
High current capability
High reliability
High surge current capability
Mechanical Data
Cases: Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Terminals: Leads solderable per
MIL-STD-202, Method 208 guaranteed
Polarity: As marked
High temperature soldering guaranteed:
260/10 seconds .16”,(4.06mm) from
case.
Mounting position: Any
Weight: 2.24 grams
.113(2.87)
.103(2.62)
.412(10.5)
MAX
DIA
.154(3.91)
.148(3.74)
.27(6.86)
.23(5.84)
.594(15.1)
.587(14.9)
.185(4.70)
.175(4.44)
.055(1.40)
.045(1.14)
.16(4.06)
.14(3.56)
PIN1
2
.037(0.94)
.027(0.68)
.56(14.22)
.53(13.46)
.11(2.79)
.10(2.54)
.205(5.20)
.195(4.95)
.025(0.64)
.014(0.35)
PIN 1
PIN 2
CASE
Case Positive
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol FRA FRA FRA FRA FRA FRA FRA Units
801G 802G 803G 804G 805G 806G 807G
Maximum Recurrent Peak Reverse Voltage
VRRM 50 100 200 400 600 800 1000 V
Maximum RMS Voltage
VRMS 35 70 140 280 420 560 700 V
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
@TC = 55
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC
method )
VDC
I(AV)
IFSM
50 100 200 400 600 800 1000 V
8.0 A
150 A
Maximum Instantaneous Forward Voltage @ 8.0A
Maximum DC Reverse Current @ TC=25
at Rated DC Blocking Voltage @ TC=125
VF
IR
1.3 V
5.0 uA
100 uA
Maximum Reverse Recovery Time ( Note 2 )
Trr
150
250 500
nS
Typical Junction Capacitance ( Note 1 ) TJ=25
Cj
60 pF
Typical Thermal Resistance (Note 3)
RθJC
3.0
Operating and Storage Temperature Range
TJ ,TSTG
-65 to +150
Notes: 1. Measured at 1 MHz and Applied Reverse Voltage of 4..0 Volts D.C.
2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
3. Thermal Resistance from Junction to Case, with Heatsink size 2” x 3” x 0.25” Al-Plate
/W
- 452 -


  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

FRA803G Datasheet

(FRA801G - FRA807G) Glass Passivated Fast Recovery Rectifiers

No Preview Available !

FRA803G pdf
www.DataSheet4U.com
RATINGS AND CHARACTERISTIC CURVES (FRA801G THRU FRA807G)
FIG.1- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50W
NONINDUCTIVE
10W
NONINDUCTIVE
(+)
50Vdc
(approx)
(-)
DUT
1W
NON
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
(-)
PULSE
GENERATOR
(NOTE 2)
(+)
+0.5A
0
-0.25A
trr
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
FIG.2- MAXIMUM FORWARD CURRENT DERATING
CURVE
10
8
6
4
2
0
0 50 100
CASE TEMPERATURE. (oC)
FIG.3- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
150
125
100
75
TJ=1250C
8.3ms Single Half Sine Wave
JEDEC Method
150
50
25
0
12
5 10 20
NUMBER OF CYCLES AT 60Hz
50 100
FIG.4- TYPICAL JUNCTION CAPACITANCE
120
100
80
60
40
Tj=250C
20 f=1.0MHz
Vsig=50mVp-p
0
0.1
0.5 1
5 10
50
REVERSE VOLTAGE. (V)
100
500 1000
-1.0A
1cm
SET TIME BASE FOR
5/ 10ns/ cm
FIG.5- TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
400
200
100
40
20
Tj=25oC
Pulse Width=300 s
1% Duty Cycle
10
4
2
1
0.4
0.2
0.1
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
INSTANTANEOUS FORWARD VOLTAGE. (V)
FIG.6- TYPICAL REVERSE CHARACTERISTICS
100
40
Tj=1250C
10
4 Tj=750C
2
1
0.4
0.2 Tj=250C
0.1
0
20 40
60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
- 453 -


Part Number FRA803G
Description (FRA801G - FRA807G) Glass Passivated Fast Recovery Rectifiers
Maker Taiwan Semiconductor Company
Total Page 2 Pages
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