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  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

KBU1006 Datasheet

(KBU1001 - KBU1007) Silicon Bridge Rectifiers

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KBU1001 - KBU1007
Single Phase 10 AMPS. Silicon Bridge Rectifiers
KBU
Features
UL Recognized File # E-96005
High surge current capability
Ideal for printed circuit board
Reliable low cost construction technique
results in inexpensive product
High temperature soldering guaranteed:
260 oC / 10 seconds / 0.375” ( 9.5mm )
lead length at 5 lbs., ( 2.3 kg ) tension
Weight: 8 grams
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol KBU KBU KBU KBU KBU KBU KBU Units
1001 1002 1003 1004 1005 1006 1007
Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V
Maximum RMS Voltage
VRMS 35 70 140 280 420 560 700 V
Maximum DC Blocking Voltage
VDC 50 100 200 400 600 800 1000 V
Maximum Average Forward Rectified
Current @TA = 55 oC
I(AV)
10
A
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated IFSM
Load (JEDEC method )
300
A
Maximum Instantaneous Forward Voltage
@ 5.0A
@ 10A
Maximum DC Reverse Current @ TA=25 oC
at Rated DC Blocking Voltage @ TA=125 oC
Typical Thermal Resistance (Note)
Operating Temperature Range
Storage Temperature Range
VF
IR
RθJC
TJ
TSTG
1.0
1.1
10
500
2.2
-55 to +125
-55 to +150
V
uA
uA
oC/W
oC
oC
Note: Thermal Resistance from Junction to Case with Device Mounted on 2” x 3” x 0.25” Al-Plate.
- 642 -
Version: A06


  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

KBU1006 Datasheet

(KBU1001 - KBU1007) Silicon Bridge Rectifiers

No Preview Available !

RATINGS AND CHARACTERISTIC CURVES (KBU1001 THRU KBU1007)
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FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
12
FIG.2- TYPICAL REVERSE CHARACTERISTICS
PER BRIDGE ELEMENT
10
10
Tj=1250C
8
61
4
MOUNTED ON 4X4 INCH
2
COPPER PC BOARD
0.5"(12.7mm)LEAD LENGTH
0
0 50 100
AMBIENT TEMPERATURE. (oC)
150
FIG.3- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT PER BRIDGE ELEMENT
350
Tj=250C
300
8.3ms Single Half Sine Wave
250
200
150
100
50
0
1
2
5 10 20
NUMBER OF CYCLES AT 60Hz
50
100
FIG.5- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS PER BRIDGE ELEMENT
100
40
20
10
0.1
Tj=250C
0.01
0 20 40
60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FIG.4- TYPICAL JUNCTION CAPACITANCE
1000
600
500
Tj=250C
400
300
200
100
0
0.1
0.5 1 2
5 10 20
50 100 200 500 800
REVERSE VOLTAGE. (V)
4
2
1
0.4
0.2
0.1
0.6
Tj=250C
8.3ms Single Half Sine Wave
0.7 0.8 0.9 1.0 1.1 1.2
INSTANTANEOUS FORWARD VOLTAGE. (V)
1.3
Version: A06


Part Number KBU1006
Description (KBU1001 - KBU1007) Silicon Bridge Rectifiers
Maker Taiwan Semiconductor Company
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KBU1006 Datasheet PDF






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