MBR20H200CT Datasheet | Taiwan Semiconductor

MBR20H100CT - MBR20H200CT .. Pb Ro HS PLIANCE 20.0 AMPS. Schottky Barrier Rectifiers TO-220AB Features — — — — — — — — Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop High surge capability For use in power supply - output rectification, power management, instrumentation Guardring for overvoltage protection High temperature soldering guaranteed: 260o C/10 seconds,0.25”(6.35mm)from case Mechanical Data — — — — — — Cases: JEDEC TO-220AB molded plastic body Terminals: Pure tin plated, lead free. solderable per MIL-STD-750, Method 2026 Polarity: As marked Mounting position: Any Mounting torque: 5 in. - lbs. max Weight: 0.08 ounce, 2.24 grams Maximum Ratings and Electrical Characteristics Rating at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% MBR Type Number Symbol 20H100CT Maximum Recurrent Peak Reverse Voltage VRRM 100 Maximum RMS Voltage VRMS 70 Maximum DC Blocking Voltage VDC 100 Maximum Average Forward Rectified Current O at Tc=125 C Peak Repetitive Forward Current (Rated VR, o Square Wave, 20KHz) at Tc=125 C Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Peak Repetitive Reverse Surge Current (Note 1) Maximum Instantaneous Forward Voltage at: o (Note 2) IF=10A, TC=25 C o IF=10A, TC=125 C o IF=20A, TC=25 C o IF=20A, TC=125 C Maximum Instantaneous Reverse Current o @ Tc =25 C at Rated DC Blocking Voltage o @ Tc=125 C (Note 2) Voltage Rate of Change (Rated VR) Maximum Typical Thermal Resistance (Note 3) MBR 20H150CT 150 105 150 20 20 150 MBR Units 20H200CT 200 V 140 V 200 V A A A 0.5 A V I(AV) IFRM IFSM IRRM VF 0.85 0.75 0.95 0.85 1.0 0.88 0.75 0.97 IR d V/dt RθJC 5 2.0 10,000 1.5 u A m A V/u S o C/W o Operating...