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  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

RGP30A Datasheet

(RGP30x) Glass Passivated Junction Fast Recovery Rectifiers

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RGP30A THRU RGP30M
Features
3.0 AMPS. Glass Passivated Junction Fast Recovery Rectifiers
Voltage Range
50 to 1000 Volts
Current
3.0 Amperes
DO-201AD
High temperature metallurgically bonded constructed
Plastic material used carries Underwriters Laboratory
Classification 94V-0
Glass passivated cavity-free junction
Capable of meeting environmental standards of
MIL-S-19500
www.DataSheet4U.com3T.y0paicmalpIeRrleesospethraatnio0n.2atuTAA=55oC with no thermal runaway
High temperature soldering guaranteed:
350oC / 10 seconds, 0.375”(9.5mm) lead length, 5 lbs.,
(2.3kg) tension
Fast switching for high efficiency
Mechanical Data
Case: JEDEC DO-201AD molded plastic over glass body
Lead: Plated Axial leads, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Mounting position: Any
Weight: 0.048 ounce, 1.28 grams
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol RGP RGP RGP RGP RGP RGP RGP Units
30A 30B 30D 30G 30J 30K 30M
Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V
Maximum RMS Voltage
VRMS 35 70 140 280 420 560 700 V
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current .375” (9.5mm) Lead Length
@ TA = 55
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
VDC
I(AV)
IFSM
50 100 200 400 600 800 1000 V
3.0 A
125 A
Maximum Instantaneous Forward Voltage
@ 3.0A
VF
1.3 V
Maximum DC Reverse Current@ TA=25
at Rated DC Blocking Voltage @TA=125
IR
5.0 uA
100 uA
Maximum Reverse Recovery Time ( Note 1 )
TJ=25
Trr
150
250 500
nS
Typical Junction Capacitance ( Note 2 )
Cj
40 pF
Typical Thermal Resistance (Note 3)
RθJA
30 /W
Operating & Storage Temperature Range TJ , TSTG
-65 to + 175
Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A Recover to 0.25A.
2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0 Volts.
3. Mount on Cu-Pad Size 16mm x 16mm on P.C.B.
- 580 -


  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

RGP30A Datasheet

(RGP30x) Glass Passivated Junction Fast Recovery Rectifiers

No Preview Available !

RATINGS AND CHARACTERISTIC CURVES (RGP30A THRU RGP30M)
www.DataSheet4U.com
FIG.1- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50W
NONINDUCTIVE
10W
NONINDUCTIVE
(+)
50Vdc
(approx)
(-)
DUT
1W OSCILLOSCOPE
NON
(NOTE 1)
INDUCTIVE
(-)
PULSE
GENERATOR
(NOTE 2)
(+)
+0.5A
0
-0.25A
trr
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
FIG.2- MAXIMUM FORWARD CURRENT DERATING
CURVE
4.0
RESISTIVE OR
3.0 INDUCTIVE LOAD
-1.0A
1cm
SET TIME BASE FOR
5/ 10ns/ cm
FIG.5- TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
10
2.0
1.0
0.375" (9.5mm) LEAD LENGTH
0
0 25 50 75 100 125
LEAD TEMPERATURE. (oC)
150 175
FIG.3- MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
200
100
Tj=Tj max.
8.3ms Single Half Sine Wave
JEDEC Method
0
1 10
NUMBER OF CYCLES AT 60Hz
100
FIG.4- TYPICAL JUNCTION CAPACITANCE
100
Tj=250C
f=1.0MHz
Vsig=50mVp-p
1
Tj=250C
PULSE WIDTH-300 S
1% DUTY CYCLE
0.1
0.01
0.4
0.6 0.8 1.0 1.2
FORWARD VOLTAGE. (V)
1.4 1.6
FIG.6- TYPICAL REVERSE CHARACTERISTICS
20
Tj=1250C
10
Tj=1000C
1
Tj=750C
0.1
Tj=250C
10
1 10
REVERSE VOLTAGE. (V)
0.01
100 0 20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE
VOLTAGE. (%)
- 581 -


Part Number RGP30A
Description (RGP30x) Glass Passivated Junction Fast Recovery Rectifiers
Maker Taiwan Semiconductor Company
PDF Download

RGP30A Datasheet PDF






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