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TSM35N03 - Straight 1-Row BergStik II Headers

Features

  • Advance Trench Process Technology.
  • High Density Cell Design for Ultra Low On-resistance.

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Datasheet preview – TSM35N03

Datasheet Details

Part number TSM35N03
Manufacturer Taiwan Semiconductor Company
File Size 235.14 KB
Description Straight 1-Row BergStik II Headers
Datasheet download datasheet TSM35N03 Datasheet
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Full PDF Text Transcription

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TSM35N03 25V N-Channel MOSFET TO-252 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 25 8.5 @ VGS = 10V 13 @ VGS = 4.5V ID (A) 30 30 Features ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance Application ● Load Switch ● Dc-DC Converters and Motors Drivers Ordering Information Block Diagram Part No. TSM35N03CP RO Package TO-252 Packing 2.5Kpcs / 13” Reel N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current, VGS @4.5V. VGS ID Pulsed Drain Current, VGS @4.
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