20V/5A ,
R =20mΩ(typ. ) @ V =4.5V
DS(ON)
GS
RDS(ON) =40mΩ(typ. ) @ VGS =2.5V Super High Dense Cell Design
Reliable and Rugged
Lead Free Available (RoHS Compliant)
Pin.
Full PDF Text Transcription for TDM2302 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
TDM2302. For precise diagrams, and layout, please refer to the original PDF.
N-Channel Enhancement Mode MOSFET Datasheet TDM2302 Features 20V/5A , R =20mΩ(typ.) @ V =4.5V DS(ON) GS RDS(ON) =40mΩ(typ.) @ VGS =2.5V Super High Dense Cell Design Relia...
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GS RDS(ON) =40mΩ(typ.) @ VGS =2.5V Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) Pin Description Top View of SOT23-3L Applications Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems. G Ordering and Marking Information N-Channel MOSFET TDM2302☐ ☐ -☐ ☐ ☐ Lead Free Code Handing Code Temp. Range Packge Code Packge Code A: SOT23-3L Operating Junction Temp.
TDM2302 Datasheet
