TDM2306 - N-Channel Enhancement Mode MOSFET

Techcode

General Description

voltages as low as 2.5V.

Key Features

VDS = 30V,ID = 5A RDS(ON) < 50mΩ @ VGS=2.5V RDS(ON) < 35mΩ @ VGS=4.5V RDS(ON) < 30mΩ @ VGS=10V.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package.

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TDM2306 n-channel enhancement mode mosfet by Techcode - Datasheet Preview

Datasheet Details

Part number	TDM2306
Manufacturer	Techcode
File Size	322.11 KB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	TDM2306 Datasheet

Full PDF Text Transcription for TDM2306 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for TDM2306. For precise diagrams, and layout, please refer to the original PDF.

N-Channel Enhancement Mode Power MOSFET Datasheet TDM2306 DESCRIPTION The TDM2306 uses advanced trench technology to provide excellent R , low gate charge and operation ...

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nch technology to provide excellent R , low gate charge and operation with gate DS(ON) voltages as low as 2.5V. GENERAL FEATURES ● VDS = 30V,ID = 5A RDS(ON) < 50mΩ @ VGS=2.5V RDS(ON) < 35mΩ @ VGS=4.

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