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TDM31064 Datasheet PDF

Techcode TDM31064

The TDM31064 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
Part No. TDM31064
Datasheet TDM31064 Download
Manufacturer
Techcode
Description N-Channel Enhancement Mode MOSFET
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TDM31064 datasheet page 1 preview

DESCRIPTION

GENERAL FEATURES

● RDS(ON) < 18.8mΩ @ VGS=4.5V RDS(ON) < 14.0mΩ @ VGS=10V
● High Power and current handling capability
● Lead free product is available
● TO‐220 Package Application
● PWM applications
● Load switch
● Power management
● Hard Switched and High Frequency Circuits DATASHEET TDM31064

ABSOLUTE MAXIMUM RATINGS

(TA=25℃unless otherwise noted) Parameter Symbol Drain‐Source Voltage VDS Gate‐Source Voltage VGS Diode Continuous Forward Current Pulsed Drain Current Drain Current @ Continuous IS(TC=25℃) IDM(TC=25℃) ID(TC=25℃) ID(TC=100℃) Maximum Power Dissipation(t≤10s) PD(TC=25℃) PD(TC=100℃) Drain Current @ Continuous Maximum Power Dissipation(t≤10s) Thermal Resistance,Junction‐to‐Case ID(TA=25℃) ID(TA=70℃) PD(TA=25℃) PD(TA=70℃) RθJC Thermal Resistance,Junction‐to‐Ambient (Note 1) RθJA(Steady State) Avalanche Current, Single pulse IAS(L=0.5mH) Avalanche Energy, Single pulse Maximum Operating Junction Temperature EAS(L=0.5mH) TJ Storage Temperature Range TSTG Limit 100 +20...
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