TDM3307 mosfet equivalent, p-channel enhancement mode mosfet.
* ‐30V/‐50A
* RDS(ON) < 16mΩ @ VGS=‐4.5V
RDS(ON) < 9.5mΩ @ VGS=‐10V
* Reliable and Rugged
* HBM ESD capability level of 8KV typical
* Lead free .
GENERAL FEATURES
* ‐30V/‐50A
* RDS(ON) < 16mΩ @ VGS=‐4.5V
RDS(ON) < 9.5mΩ @ VGS=‐10V
* Reliable and Ru.
The TDM3307 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES
* ‐30V/‐50A
* RDS(ON) < 16mΩ @ .
Image gallery