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TDM3514 - Dual N-Channel Enhancement Mode MOSFET

Description

The  TDM3514  uses  advanced  trench  technology  to  provide  excellent  RDS(ON)  and  low  gate  charge.

This  device  is  suitable  for  use  as  a  load  switch  or  in  PWM  applications.

Features

  •  .
  • 20V/9.7A,  RDS(ON) .

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Datasheet Details

Part number TDM3514
Manufacturer Techcode
File Size 673.10 KB
Description Dual N-Channel Enhancement Mode MOSFET
Datasheet download datasheet TDM3514 Datasheet

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Full PDF Text Transcription

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T  echcode®       Dual N-Channel Enhancement Mode MOSFET DATASHEET TDM3514 DESCRIPTION  The  TDM3514  uses  advanced  trench  technology  to  provide  excellent  RDS(ON)  and  low  gate  charge.  This  device  is  suitable  for  use  as  a  load  switch  or  in  PWM  applications.  GENERAL FEATURES     20V/9.7A,  RDS(ON) < 9.9mΩ @ VGS=2.5V    RDS(ON) < 8.7mΩ @ VGS=3.1V  RDS(ON) < 8.2mΩ @ VGS=3.7V    RDS(ON) < 7.9mΩ @ VGS=4.0V  RDS(ON) < 7.5mΩ @ VGS=4.
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